晶圆级超导NbTiN薄膜的非接触太赫兹映射
Contactless terahertz mapping of wafer-scale superconducting NbTiN thin films
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中文总结 AI 辅助
研究大规模超导量子技术中晶圆级超导薄膜均匀性问题，利用太赫兹光谱对NbTiN薄膜进行映射，证明该技术可在光刻前评估薄膜，助力可重复器件制造，其电阻偏差与沉积设备和膜厚有关，临界温度和能隙变化小。
中文摘要 AI 辅助
对于大规模超导量子技术，如量子计算，晶圆级超导薄膜的均匀性对制造器件的一致性能至关重要。太赫兹（THz）光谱作为一种非接触、无损测量技术，是表征超导薄膜的有力工具。本文通过太赫兹光谱研究了一组通过等离子体增强磁控溅射在4英寸和6英寸硅晶圆上生长的铌钛氮（NbTiN）薄膜：在室温下对整个晶圆进行映射，并在低温下对示例段进行表征。观察到的薄层电阻偏差取决于所用的沉积设备和薄膜厚度。虽然超导薄层动态电感的偏差与常态薄层电阻的偏差相匹配，但临界温度和能隙变化很小。这种太赫兹映射技术证明了在光刻之前评估晶圆级超导薄膜的可行性，有助于为可重复的器件制造制备薄膜。
英文摘要
For large-scale superconducting quantum technology, e.g. quantum computing, the homogeneity of wafer-scale superconducting thin films is vital for consistent performance of the fabricated devices. Terahertz (THz) spectroscopy as a contactless and non-destructive measurement technique is a powerful tool to characterize the superconducting films. In this work, a set of niobium titanium nitride (NbTiN) thin films on 4-inch and 6-inch silicon wafers, grown via plasma-enhanced magnetron sputtering, are investigated via THz spectroscopy: full wafers are mapped at room temperatures and exemplary segments are characterized at cryogenic temperatures. The deviations in observed sheet resistance depend on the used deposition device and the film thickness. While the deviations in superconducting sheet kinetic inductance match those of the normal-state sheet resistance, the critical temperature and energy gap exhibit little variation. This THz mapping technique demonstrates the feasibility of evaluating wafer-scale superconducting thin films before lithography, facilitating preparation of the thin films for reproducible device fabrication.
