AI 中文总结
研究通过等离子体辅助分子束外延在GaN模板上两步生长(In,Ga)N伪衬底，引入两步方案，第一步产生粗糙中间表面，最终表面光滑，上层成分均匀，面内晶格常数约3.26Å，该方法无需复杂外部处理，具可扩展性和经济性。
AI 中文摘要
通过等离子体辅助分子束外延在GaN模板上生长(In,Ga)N层。我们引入了一种两步方案，涉及将生长条件从最初的N稳定切换到金属稳定。反射高能电子衍射以及扫描电子和原子力显微镜显示，第一步产生具有开放坑的粗糙中间表面，而最终表面是光滑的。光致发光带的窄线宽表明上层具有优异的成分均匀性。通过X射线衍射测量确定其面内晶格常数约为3.26Å。这些有利特性的组合使得这些层作为红色发光(In,Ga)N发光二极管生长的伪衬底具有吸引力。特别是，这里提出的方法不需要任何复杂的外部处理，因此具有可扩展性和经济性。
英文摘要
(In,Ga)N layers are grown by plasma-assisted molecular beam epitaxy on GaN templates. We introduce a two-step protocol that involves switching the growth conditions from initially N-stable to metal-stable. Reflection high-energy electron diffraction as well as scanning electron and atomic force microscopy reveal that the first step results in a rough intermediate surface with open pits, whereas the final surface is smooth. The narrow linewidth of the photoluminescence band indicates an excellent compositional homogeneity of the upper layer. Its in-plane lattice constant is determined to be $\approx$3.26 Åfrom X-ray diffraction measurements. This combination of favorable properties makes these layers attractive as pseudo-substrates for the growth of red-emitting (In,Ga)N light-emitting diodes. In particular, the approach presented here does not require any complex external processing and is, thus, scalable and economical.
