AI 中文总结
研究硅 MOSFET 中同向传播谷边缘通道间的跃迁，通过设置体填充因子观察到强谷间混合，跃迁概率近 1/2，不同自旋取向边缘通道间跃迁概率可忽略不计，证明谷间耦合能为谷边缘通道提供类似分束器操作，助力紧凑硅量子霍尔干涉仪。
AI 中文摘要
同向传播的量子霍尔边缘通道为紧凑电子干涉测量和飞行量子态提供了一个有前景的平台。在硅中，由于弱自旋轨道相互作用强烈抑制自旋翻转散射，谷自由度为自旋分辨边缘通道提供了自然替代方案。本文研究了双层栅控硅金属氧化物半导体场效应晶体管中同向传播谷边缘通道间的通道间跃迁。将体填充因子设为 $\nu = 2$ 时，两个自旋极化谷边缘通道在耗尽侧栅极附近靠近。观察到强谷间混合，跃迁概率接近 1/2，表明两个谷边缘通道间几乎完全平衡。相比之下，不同自旋取向的边缘通道间的通道间传输跃迁概率可忽略不计，与硅中自旋翻转散射受抑制一致。这些结果表明，Si/SiO₂ 界面处的谷间耦合可为同向传播谷边缘通道提供类似分束器的操作，为紧凑硅量子霍尔干涉仪奠定关键基础。
英文摘要
Copropagating quantum Hall edge channels provide a promising platform for compact electron interferometry and flying quantum states. In silicon, the valley degree of freedom offers a natural alternative to spin-resolved edge channels because spin-flip scattering is strongly suppressed by the weak spin-orbit interaction. Here, we investigate interchannel transitions between copropagating valley edge channels in a double-layer-gated silicon metal-oxide-semiconductor field-effect transistor. With the bulk filling factor set to $ν=2$, two spin-polarized valley edge channels are brought into close proximity near a depleted side gate. We observe strong intervalley mixing, with a transition probability close to 1/2, indicating nearly complete equilibration between the two valley edge channels. In contrast, interchannel transport between edge channels with different spin orientations shows negligible transition probability, consistent with suppressed spin-flip scattering in silicon. These results demonstrate that intervalley coupling at a Si/SiO$_2$ interface can provide a beam-splitter-like operation for copropagating valley edge channels, establishing a key building block toward compact silicon quantum Hall interferometers.
