通过氧化固相外延生长的SiGe层中的自发纳米图案化和应变弛豫
Spontaneous Nanopatterning and Strain Relaxation in SiGe Layers Grown by Oxidative Solid Phase Epitaxy
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中文总结 AI 辅助
研究硅上III-V族材料异质外延问题，通过氧化固相外延生长SiGe层形成超薄应变弛豫缓冲层，利用该过程中Ge浓度变化的纳米图案化及位错网络，分析图案间距获取局部应变状态，为III-V光电子异质外延设计缓冲层提供重要方法。
中文摘要 AI 辅助
硅上III-V族材料的晶圆级单片集成将带来用于数据、计算和其他应用的革命性光电子硬件。然而，III-V族在硅上的异质外延需要克服材料之间的大晶格和热失配，并降低位错密度。在这项工作中，我们探索了Ge+注入的Si(111)的氧化固相外延（SPE），以形成用于在硅上异质外延的超薄应变弛豫SiGe变质缓冲层。SPE过程导致样品表面Ge浓度变化的纳米图案化，通过扫描和透射电子显微镜（SEM和TEM）可见。浓度图案化是SiGe/Si界面处肖克利部分位错的六边形网络的结果。分析SEM观察到的图案间距被证明是一种获取SiGe层局部应变状态的简单、无损方法。这项工作对于在硅平台上为III-V光电子异质外延设计超薄SiGe变质缓冲层很重要。
英文摘要
The wafer-scale monolithic integration of III-V materials on Si would lead to revolutionary optoelectronic hardware for data, computing and other applications. However, heteroepitaxy of III-Vs on Si requires overcoming the large lattice and thermal mismatches between the materials and reducing threading dislocations densities. In this work, we explore the oxidative solid phase epitaxy (SPE) of Ge+ implanted Si(111) to form ultra-thin strain-relieving SiGe metamorphic buffer layers for heteroepitaxy on Si. The SPE process is shown to result in a nanopatterning of the Ge concentration variation across the sample surface, visible by scanning and transmission electron microscopy (SEM and TEM). The concentration patterning is the result of a hexagonal network of Shockley partial dislocations at the SiGe/Si interface. Analyzing the pattern spacing observed by SEM is demonstrated as an easy, non-destructive method for obtaining the local strain state of SiGe layers. This work is important for engineering ultra-thin SiGe metamorphic buffer layers for III-V optoelectronics heteroepitaxy on the silicon platform.
