AI 中文总结
研究高伽马辐照下p型衬底n+注入硅二极管的体损伤，通过测量IV和CV特性等表征位移损伤，发现体漏电流随剂量线性增加，有效掺杂浓度等有变化，且辐照二极管无退火效应。
AI 中文摘要
研究了高总电离剂量伽马辐照对p型硅传感器的体损伤。对不同氧浓度和硅体电阻率的n+注入p型硅二极管进行了研究。采用二次离子质谱技术测定各样本中的氧相对浓度。被测二极管用60Co伽马源辐照，总电离剂量范围为0.50至8.28MGy，并在60°C下退火80分钟。研究的主要目标是通过测量IV和CV特性以及全耗尽电压随总电离剂量的变化来表征伽马辐射引起的位移损伤。使用瞬态电流技术验证全耗尽电压，并提取最低和最高总电离剂量辐照的硅二极管中的电场分布和空间电荷符号。结果表明，体漏电流随总电离剂量呈线性增加，损伤系数取决于硅二极管的初始电阻率和氧浓度。有效掺杂浓度和全耗尽电压在总电离剂量增加时显著降低，在特定剂量后又开始增加。我们认为有效掺杂浓度的初始降低是由于受主去除效应。本研究的另一个显著发现是，伽马辐照二极管的体漏电流和CV特性没有显示出任何退火效应的证据。
英文摘要
The bulk damage of $p$-type silicon sensors caused by gamma irradiation with high total ionizing doses has been investigated. The study was carried out on different types of $n^+$-in-$p$ silicon diodes with different oxygen concentrations and silicon bulk resistivities. The Secondary-Ion Mass Spectrometry technique was used to determine the relative concentration of oxygen in the individual samples. The measured diodes were irradiated by a $^{60}$Co gamma source to total ionizing doses ranging from 0.50 up to 8.28 MGy, and annealed for 80 minutes at 60°C. The main goal of the study was to characterize the gamma-radiation induced displacement damage by measuring IV and CV characteristics, and the evolution of the full depletion voltage with the total ionizing dose. The Transient Current Technique was used to verify the full depletion voltage and to extract the electric field distribution and the sign of the space charge in the silicon diodes irradiated to the lowest and the highest delivered total ionizing doses. The results show a linear increase of the bulk leakage current with the total ionizing dose, with the damage coefficient being dependent on initial resistivity and oxygen concentration of the silicon diode. The effective doping concentration and full depletion voltage decrease significantly with an increasing total ionizing dose, before starting to increase again at a specific dose. We assume that the initial decrease in the effective doping concentration is caused by the effect of acceptor removal. An additional notable finding of this study is that the bulk leakage current and CV characteristics of the gamma-irradiated diodes do not show any evidence of an annealing effect.
Journal refNuclear Instruments and Methods in Physics Research A 1064 (2024) 169432
DOI：10.1016/j.nima.2024.169432
