AI 中文总结
研究通过高选择性深感应耦合等离子体反应离子刻蚀和室温键合制备二氧化硅上的金刚石异质结构，用单层SiO2硬掩膜结合多步氧基刻蚀工艺，实现对金刚石膜的完全穿透蚀刻，为集成量子光子学和传感应用提供可扩展无污染途径。
AI 中文摘要
单晶金刚石是高功率电子学和固态量子技术的主要材料平台，但许多器件架构需要从市售衬底上图案化出具有深度蚀刻特征的微米级膜。本文中，我们展示了使用单层SiO2硬掩膜结合多步氧基感应耦合等离子体反应离子刻蚀工艺对16μm厚的NV掺杂单晶金刚石膜进行完全穿透蚀刻。该非金属掩膜策略以15:1的金刚石与SiO2选择性，能实现几十μm的蚀刻深度，侧壁清晰，表面粗糙度不变且微掩膜可忽略不计。蚀刻后剩余的氧化层用作后续集成步骤中的键合表面。蚀刻后的微结构转移到SiO2衬底上，通过O2等离子体表面活化和硅酸钠中间层在室温下键合。所得硅氧烷膜在可见光谱范围内光学透明，不引入可检测的寄生光致发光，保留了嵌入NV中心的光学读出。这种深蚀刻和室温键合工艺为从块状金刚石膜到用于集成量子光子学和传感应用的二氧化硅上的金刚石异质结构提供了一种可扩展且无污染的途径。
英文摘要
Single-crystal diamond is a leading material platform for high-power electronics and solid-state quantum technologies, yet many device architectures require micrometer-scale membranes with deeply etched features, patterned from commercially available substrates. In this work, we demonstrate a complete through-etch of a 16 μm -thick NV-doped single-crystal diamond membrane using a single-layer SiO2 hard mask combined with a multi-step oxygen-based ICPRIE process. With a diamond-to-SiO2 selectivity of 15:1, this non-metallic mask strategy can achieve etch depths of few tens of μm with well-defined sidewalls, conserved surface roughness and negligible micromasking. Furthermore, we use the oxide layer that remains after etching to serve as the bonding surface in a subsequent integration step. The etched microstructures are transferred onto SiO2 substrates and bonded at room temperature using O2 plasma surface activation and a sodium silicate interlayer. The resulting siloxane film is optically transparent across the visible spectrum and introduces no detectable parasitic photoluminescence, preserving the optical readout of the embedded NV centers. Together, this deep-etch and room-temperature bonding process provides a scalable and contaminationfree route from bulk diamond membranes to diamond-on-silica heterostructures for integrated quantum photonics and sensing applications.
Comments12 pages, 5 figures
Journal refDiamond and Related Materials, vol 168, 113992 (2026)
DOI：10.1016/j.diamond.2026.113992
