AI 中文总结
研究CsV₃Sb₅中电荷密度波与超导性相互作用，结合面内单轴应变和c轴压缩，揭示c轴压缩对超导转变温度等的影响，发现面外晶格控制主导相竞争，还分离弹性电阻系数，为解决层状量子材料应变耦合电子响应提供途径。
AI 中文摘要
层状金属CsV₃Sb₅中电荷密度波（CDW）序与超导性之间存在有趣的相互作用，对晶格畸变高度敏感。传统基于压电的实验中，面内（A₁g,1）和面外（A₁g,2）对称应变通道的固有混合阻碍了确定其具体作用。本文结合面内单轴应变和直接c轴压缩，独立获取并解开这些对称分辨响应。发现c轴压缩使超导转变温度（Tc）大幅线性增强，同时抑制TCDW。面外变形的调谐效率与面内应变相反且远超，表明c轴晶格控制主导相竞争。此外，通过分离纯弹性电阻系数，发现面外交叉耦合系数（m₁₃）与面内响应（m₁₁ + m₁₂）大小可比但符号相反。m₁₃在CDW转变时呈现独特的、类似序参量的起始。结果表明面外晶格控制在调谐CsV₃Sb₅中交织态起主导作用，为解决层状量子材料中应变耦合电子响应提供途径。
英文摘要
The kagome metal CsV$_{3}$Sb$_{5}$ hosts an intriguing interplay between charge-density-wave (CDW) order and superconductivity that is highly sensitive to lattice distortions. However, determining the specific roles of the in-plane ($A_{1g,1}$) and out-of-plane ($A_{1g,2}$) symmetric strain channels has been hindered by their intrinsic mixing in conventional piezo-based experiments. Here, we combine in-plane uniaxial strain with direct $c$-axis compression to independently access and disentangle these symmetry-resolved responses in CsV$_{3}$Sb$_{5}$. We reveal that $c$-axis compression drives a massive, linear enhancement of the superconducting transition temperature ($T_c$) alongside a suppression of $T_{\rm CDW}$. The tuning efficiency of this out-of-plane deformation acts with an opposite sign and far exceeds that of in-plane strain, demonstrating that $c$-axis lattice control dictates the phase competition. Furthermore, by isolating the pure elastoresistivity coefficients, we find that the out-of-plane cross-coupling coefficient ($m_{13}$) is comparable in magnitude but opposite in sign to the in-plane response ($m_{11}+m_{12}$). Unlike the sharply peaked in-plane response, $m_{13}$ exhibits a distinct, order-parameter-like onset across the CDW transition. Our results establish that out-of-plane lattice control plays a dominant role in tuning the intertwined states in CsV$_{3}$Sb$_{5}$ and provide a general pathway for resolving strain-coupled electronic responses in layered quantum materials.
Comments8 pages, 4 figures
