分子束外延生长的AlScN薄膜的二阶光学非线性
Second-Order Optical Nonlinearity of AlScN Films Grown By Molecular Beam Epitaxy
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中文总结 AI 辅助
研究通过分子束外延测量AlScN薄膜二阶光学非线性，绕过AlN缓冲层直接生长以分离真实响应，结果显示d31增强、d33受抑，d31高达4.92 pm/V，为基于AlScN的光子器件与其他器件外延集成及节能非线性光学操作奠定基础。
中文摘要 AI 辅助
AlN合金迅速成为非线性光学的材料平台。本文通过分子束外延测量了直接生长在氮化c面蓝宝石上的AlScN薄膜的二阶光学非线性。这种绕过厚AlN缓冲层的直接生长方法，能分离出AlScN薄膜的真实非线性响应。结果表明，与AlN相比，AlScN薄膜中d31大幅增强，d33受到抑制。d31高达4.92 pm/V，是AlN的60倍。基于AlScN的光子器件发展可实现节能非线性光学操作，并与基于Si、GaN和AlN的电子和光子器件外延集成。
英文摘要
Alloys of AlN have rapidly emerged as a material platform for nonlinear optics. In this paper, we measure the second-order optical nonlinearity of AlScN films grown directly on nitrided c-plane sapphire by molecular beam epitaxy. This direct growth approach, which bypasses a thick AlN buffer layer, allows us to isolate the true nonlinear response of the AlScN film. Our results show a large enhancement of d31, but a suppression of d33 in AlScN films compared to AlN. We observe that d31 can be as high as 4.92 pm/V , which is 60 times larger than that of AlN. The development of AlScN-based photonic devices can enable energy-efficient nonlinear optical operations that can be epitaxially integrated with electronic and photonic devices based on Si, GaN and AlN.
