AI 中文总结
研究旨在揭示化学气相沉积中MoS2的生长机制。通过开发半自动图像处理流程分析原位光学显微镜图像，实现对大量单晶生长轨迹的高通量重建。统计分析表明其结晶受边缘附着限制机制控制，晶体非竞争性生长，为二维材料CVD生长优化提供了有力方法。
AI 中文摘要
化学气相沉积（CVD）是可扩展合成二维过渡金属二硫属化物（如MoS2）的有前景方法，但因对其动态生长机制理解不完整，再现性和可控性存在挑战。原位表征方法虽能提供见解，但追踪大量晶体进行定量统计分析仍具挑战。本文通过开发和应用半自动图像处理流程来分析MoS2生长的原位光学显微镜图像，填补了这一空白。该框架能从单个实验中高通量重建400多个单晶的完整生长轨迹。统计分析表明，MoS2结晶受边缘附着限制机制而非前驱体扩散控制，且晶体表现出非竞争性生长。这些发现为推进对TMD生长的基本理解提供了直接定量证据，建立了用于合理优化二维材料CVD生长的有力方法。
英文摘要
Chemical Vapor Deposition (CVD) is a promising method for scalable synthesis of two-dimensional transitional metal dichalcogenides (TMDs) such as MoS2, but challenges in reproducibility and controllability persist due to an incomplete understanding of their dynamic growth mechanisms. While in-situ characterization methods could provide valuable insights, it remains challenging to track a large ensemble of crystals to enable quantitative, statistical analysis. Here, we address this gap by developing and applying a semi-automated image processing pipeline to analyze in-situ optical microscopy footage of MoS2 growth. This framework enables the high-throughput reconstruction of complete growth trajectories for over 400 individual crystals from a single experiment. Our statistical analysis demonstrates that MoS2 crystallization is governed by an edge-attachment-limited mechanism rather than by precursor diffusion. Furthermore, MoS2 crystals exhibit non-competitive growth, indicating that precursor supply does not limit the growth of neighboring flakes until physical impingement occurs. These findings provide direct, quantitative evidence that advances the fundamental understanding of TMD growth, establishing a powerful methodology for rational optimization of the CVD growth of two-dimensional materials.
