通过极紫外光刻实现的硅金属氧化物半导体量子点自旋量子比特
SiMOS quantum-dot spin qubits enabled by extreme-ultraviolet lithography
AI总结：
研究旨在实现与先进半导体制造技术兼容的硅自旋量子比特，采用极紫外光刻制造硅金属氧化物半导体自旋量子比特，通过实验得到高保真度及可再现的交换开启特性，确立了极紫外光刻用于量子处理器制造的可行性。
AI中文摘要：
大规模硅量子处理器的实现需要与先进半导体制造技术兼容的自旋量子比特，这要求光刻工艺具备纳米级精度和卓越的均匀性。尽管目前性能最佳的硅自旋量子比特依赖电子束光刻，但其串行曝光过程限制了再现性研究和晶圆级制造。本文展示了在300毫米半导体试验线中使用极紫外光刻制造的高性能硅金属氧化物半导体自旋量子比特。报告了晶圆级量子点均匀性指标，包括100%的室温栅极到栅极泄漏率和关键栅极尺寸的亚纳米控制。对两个三量子点器件中实现的四个双量子点系统进行了表征。门集层析成像显示所有四个系统的保真度始终很高，单光子辅助测量值高达99.8%，单比特门为99.9%，双比特门为99.1%。这些器件表现出10-13 分贝/伏的高度可再现交换开启特性，表明极紫外光刻实现了高制造均匀性。这些结果确立了极紫外光刻作为基于高保真硅金属氧化物半导体自旋量子比特的量子处理器的可行制造技术。
英文摘要：
The realization of large-scale silicon quantum processors requires spin qubits compatible with advanced semiconductor manufacturing technologies, demanding lithographic processes that combine nanometer-scale precision with exceptional uniformity. Although the highest-performing silicon spin qubits demonstrated to date have relied on electron-beam (e-beam) lithography, its serial exposure process limits reproducibility studies and wafer-scale fabrication. Here, we demonstrate high-performance silicon metal-oxide-semiconductor (SiMOS) spin qubits fabricated using extreme-ultraviolet (EUV) lithography in a 300 mm semiconductor pilot line. We report wafer-scale quantum-dot uniformity metrics, including 100 % room-temperature gate-to-gate leakage yield and sub-nanometer control of critical gate dimensions. We characterize four double-dot systems realized in two triple-quantum-dot devices. Gate set tomography (GST) reveals consistently high fidelities across all four systems, with values up to 99.8 % for SPAM, 99.9 % for single-qubit gates, and 99.1 % for two-qubit gates. The devices exhibit highly reproducible exchange turn-on characteristics of 10-13 dec/V, indicating high fabrication uniformity enabled by EUV patterning. These results establish EUV lithography as a viable manufacturing technology for quantum processors based on high-fidelity SiMOS spin qubits.
