AI 中文总结
研究针对低空飞行器μ子单粒子效应风险，在CORSIKA框架内用特定城市大气模型模拟，结合多组数据估算风险。结果表明不同内存系统和工艺节点风险有别，还引入μ子危险等级评估GLE事件风险，为低空航空提供了关键指导。
AI 中文摘要
随着低空经济的快速发展，无人机和电动垂直起降飞机等低空飞行器的辐射环境安全日益受到关注。尽管传统上浓密的低层大气可有效屏蔽宇宙辐射，但现代集成电路特征尺寸缩小使其对单粒子效应（SEEs）更易受影响。本研究定量评估了中国不同地区低空飞行器在静态宇宙射线背景和地面增强（GLE）事件下μ子诱发的SEEs风险。在CORSIKA框架内使用特定城市大气模型，模拟大气簇射过程并获取低能μ子（10 - 100 MeV）可靠能谱。利用其他研究组模拟数据估算不同工艺节点晶体管的μ子诱发SEEs截面。结合GLE事件相关太阳高能粒子能谱，评估静态和GLE条件下的风险。结果表明，静态条件下，45nm以下先进节点和体晶体管的1MB内存飞行控制系统在所有中国城市面临不可忽视的μ子诱发SEEs风险，而FD - SOI晶体管系统可有效降低风险。对于1GB大内存系统，无论工艺技术如何，冗余或其他加固措施都至关重要。对于GLE事件，引入μ子危险等级概念评估区域风险变化。GLE期间，中低纬度地区μ子诱发SEEs风险增加可忽略不计，高纬度地区则显著增加。
英文摘要
With the rapid development of low-altitude economy, the radiation environment safety of low-altitude aircraft such as drones and electric vertical take-off and landing aircraft has attracted increasing attention. Although the dense lower atmosphere traditionally serves as an effective shield against cosmic radiation, the shrinking feature sizes of modern integrated circuits greatly enhance their vulnerability to single-event effects (SEEs). This study quantitatively evaluates muon-induced SEE risks for low-altitude aircraft in various regions of China under both static cosmic-ray background and ground-level enhancement (GLE) events, aiming to provide critical guidance for the next-generation low-altitude aviation platforms.Using city-specific atmospheric models within the CORSIKA framework, we simulate atmospheric shower processes and obtain reliable energy spectra for low-energy muons (10-100 MeV). We also employ simulation data from other research groups to estimate muon-induced SEE cross sections for transistors at different process nodes, including bulk, FD-SOI, and FinFET technologies. By incorporating solar energetic particle spectra associated with GLE events, we assess muon-induced SEE risks under both static and GLE conditions. Our results show that under static conditions, flight control systems with 1 MB memory using advanced nodes below 45 nm and bulk transistors face non-negligible muon-induced SEE risks in all Chinese cities. In contrast, systems with FD-SOI transistors can effectively mitigate these risks. For large-memory systems (1 GB), redundancy or other hardening measures are essential regardless of the process technology. Regarding GLE events, we introduce the concept of muon hazard levels to evaluate regional risk variations. During GLEs, the increase in muon-induced SEE risk is negligible in mid-to-low latitude regions but becomes significant at high latitudes.
Comments20 pages, 9 figures
Journal refActa Phys. Sin., 2026, 75(5): 050201
