AI 中文总结
研究在Pr-Ge二元相图富Ge侧发现新晶体结构Pr₉Ge₁₆，用高温助熔剂技术生长单晶，展示其磁性能、电学性能，确定磁易轴，发现特定温度下金属行为及载流子情况，还表明磁场对磁有序的抑制作用。
AI 中文摘要
在这项工作中，我们报告了在Pr-Ge二元相图富Ge一侧发现的一种新晶体结构。使用高温助熔剂技术，我们生长出了Pr₉Ge₁₆单晶，其采用了以前未报道的具有有序Ge空位的正交Fdd2结构类型。我们展示了其各向异性磁性能，并确定垂直于晶面的晶体学b轴为磁易轴。与温度相关的电阻率测量揭示了在Tc = 14.3 K时具有明显异常的金属行为。霍尔电阻率数据表明电子型载流子占主导，载流子浓度约为10²⁷ m⁻³。沿易b轴施加约0.4 T的磁场很容易抑制磁有序。
英文摘要
In this work, we report the discovery of a new crystal structure on the Ge-rich side of the Pr-Ge binary phase diagram. Using a high-temperature flux technique, we grew single crystals of $Pr_9Ge_{16}$, which adopt a previously unreported orthorhombic $Fdd$2 structure type featuring ordered Ge vacancies. We present the anisotropic magnetic properties and identify the crystallographic $b$ axis perpendicular to the crystal plane as the magnetic easy axis. Temperature-dependent resistivity measurements reveal metallic behavior with a distinct anomaly at $T_{\mathrm{C}}$ = 14.3 K. Hall resistivity data indicate that electron-like carriers dominate, with a carrier concentration on the order of $10^{27}~\mathrm{m}^{-3}$. The magnetic order is readily suppressed by a magnetic field of approximately 0.4 T applied along the easy $b$ axis.
