AI 中文总结
研究不同材料间光子隧穿与近场热传递，推导封闭形式解析描述，阐明材料特性在热交换中的作用，得出辐射热传递主导面内波矢量是两对称参考系统相应值近似平均的结论，建立解析框架。
AI 中文摘要
近场辐射热传递可通过纳米级间隙的倏逝模耦合超过黑体极限。这种增强作用支撑了包括热光伏能量转换、电致发光冷却、热整流以及等离子体辅助光探测中的光子吸收等应用。这些系统大多涉及不同界面间的光子或热交换，特别是半导体与金属之间。尽管这种不对称配置很普遍，但尚无其近场相互作用的封闭形式描述。在此，我们推导了光子隧穿的封闭形式解析描述，阐明了材料特性（即等离子体频率、光学损耗和半导体吸收）在热交换中的作用。我们表明，辐射热传递的主导面内波矢量是两个对称参考系统（等离子体 - 等离子体腔和半导体 - 半导体腔）相应值的近似平均值。这些结果为不同材料间的近场热传递建立了一个紧凑的解析框架。
英文摘要
Near-field radiative heat transfer can exceed the blackbody limit through evanescent-mode coupling across nanoscale gaps. This enhancement underpins applications including thermophotovoltaic energy conversion, electroluminescent cooling, thermal rectification, and photon absorption in plasmon-assisted photodetection. These systems most often involve photon- or heat-exchange between dissimilar interfaces, particularly between a semiconductor and a metal. Despite the prevalence of this asymmetric configuration, no closed-form description of its near-field interaction exists. Here, we derive a closed-form analytical description of photon tunneling that clarifies the roles of material properties, namely the plasma frequency, optical loss, and semiconductor absorption, in the thermal exchange. We show that the dominant in-plane wave vector of the radiative heat transfer is an approximate average of the corresponding values for two symmetric reference systems: a plasmonic-plasmonic cavity and a semiconductor-semiconductor cavity. These results establish a compact analytical framework for near-field heat transfer between dissimilar materials.
