AI 中文总结
研究基于InAs量子点在900nm波长范围实现高效单光子源，利用改进圆形布拉格光栅及四重对称桥，维持高珀塞尔增强与光子提取效率，实现电荷可调、无闪烁及精确电荷态控制，满足下一代量子网络硬件关键需求。
AI 中文摘要
高效、确定性和可调谐单光子源的发展是实现长距离量子通信、量子中继器和光子量子计算技术的基石。本研究展示了基于嵌入p-i-n掺杂GaAs膜中的InAs量子点在900nm波长范围内的明亮、电荷可调单光子源，其发射无闪烁。使用改进的圆形布拉格光栅作为微谐振器，通过添加迷宫状几何结构的四重对称桥，在保持高珀塞尔增强和光子提取效率的同时实现与量子点的电接触。对于负三激子，展示了44.3±0.2ps的寿命，对应珀塞尔因子18.0±0.7和68.1%±3.1%的光子提取效率，且二阶自相关值g(2)(0)<0.017±0.015表明无闪烁且多光子贡献极低。通过施加垂直二极管偏置实现精确电荷态控制。这些结果展示了一种强大的架构，满足下一代量子网络硬件的关键要求。
英文摘要
The development of efficient, deterministic, and tunable single-photon sources is a cornerstone for the realization of long-distance quantum communication, quantum repeaters, and photonic quantum computing technologies. In this study, we demonstrate a bright, charge-tunable single-photon source in the 900 nm wavelength range based on InAs quantum dots (QDs) embedded in a p-i-n doped GaAs membrane, which shows blinking free emission. We use a modified circular Bragg grating (CBG) as a micro-resonator. By adding fourfold symmetric bridges in a labyrinth-like geometry, we provide a conductive pathway to the central disk, thereby enabling electrical contact to the QD while maintaining high Purcell enhancement and photon extraction efficiency (PEE). For the negative trion (X-), we demonstrate a lifetime of $44.3 \pm 0.2$ ps - corresponding to a Purcell factor of $18.0 \pm 0.7$ and a PEE of $68.1% \pm 3.1$ %. Furthermore, the device is blinking-free with very low multi-photon contribution, evidenced by a second-order autocorrelation value $g(2)(0) < 0.017 \pm 0.015$. By applying a vertical diode bias, we demonstrate precise charge-state control, resolving distinct emission plateaus ranging from the single negatively charged trion ($X^-$) to triply negatively charged excitons ($X^{3-}$). These results showcase a robust architecture that simultaneously provides high efficiency, high repetition rates, and deterministic charge control, fulfilling key requirements for the next generation of quantum network hardware.
