热 Si/SiGe 量子点中低能谷态的光谱学
Spectroscopy of low-lying valley states in hot Si/SiGe quantum dots
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中文总结 AI 辅助
研究热 Si/SiGe 量子点中低能谷态，通过比较脉冲栅极光谱（PGS）和失谐轴光谱（DAPS）在 700 mK 温度下的性能，发现 DAPS 能分辨低至约 86 μeV 的谷分裂，优于 PGS，可在高温下有效提取谷分裂。
中文摘要 AI 辅助
硅中低能谷态的存在可能阻碍大规模基于自旋的量子处理器的发展。新型 Si/SiGe 异质结构和栅极堆栈的快速原型制作对于确定增加谷分裂的途径至关重要。我们比较了脉冲栅极光谱（PGS）和失谐轴光谱（DAPS）在高达 700 mK 温度下的性能。发现 DAPS 优于 PGS，DAPS 能分辨低至约 86 μeV 的谷分裂，而 PGS 的能量分辨率仅约 210 μeV。工作表明 DAPS 可用于在高通量低温恒温器中高温下有效提取谷分裂。
英文摘要
The presence of low-lying valley states in Si may hinder the development of large-scale spin-based quantum processors. Rapid prototyping of novel Si/SiGe heterostructures and gate stacks will be central to identifying pathways that increase the valley splitting. We compare the performance of pulsed-gate spectroscopy (PGS) and detuning axis spectroscopy (DAPS) at temperatures up to 700 mK. We find that DAPS outperforms PGS, with DAPS resolving valley splittings as small as ~86 $μ$eV, while the energy resolution of PGS is only ~210~$μ$eV. Our work demonstrates that DAPS can be used to efficiently extract valley splittings at elevated temperatures in high throughput cryostats.
