AI 中文总结
该研究提出从重掺杂半导体产生强超快中红外辐射的机制，通过超快光脉冲使自由载流子产生相干振荡，推导非平衡动力学及远场辐射解析解，重掺杂砷化镓产生的中红外脉冲在远场可达\(10^7\,{\rm V/m}\)电场幅度。
AI 中文摘要
我们提出了一种从重掺杂半导体中产生强超快中红外辐射的机制。超快光脉冲将有限的冲量传递给自由载流子，使围绕电离掺杂剂的屏蔽云发生位移，并诱导产生极化的相干等离子体频率振荡。我们推导了相应非平衡动力学以及薄半导体膜发射的远场辐射的精确解析解。对于重掺杂砷化镓的实际参数，发射的中红外脉冲在远场中可直接达到约\(10^7\,{\rm V/m}\)的电场幅度，无需光学聚焦。
英文摘要
We propose a mechanism for the generation of intense ultrafast mid-infrared radiation from heavily doped semiconductors. An ultrafast optical pulse transfers a finite impulse to the free carriers, displacing the screening clouds surrounding ionized dopants and inducing coherent plasma-frequency oscillations of the resulting polarization. We derive an exact analytical solution for the corresponding nonequilibrium dynamics and the resulting far-field radiation emitted by a thin semiconductor film. For realistic parameters of heavily doped GaAs, the emitted mid-infrared pulses can reach electric-field amplitudes on the order of $10^7\,{\rm V/m}$ directly in the far field, without relying on optical focusing.
Comments5 pages, 3 figures
