AI 中文总结
研究钙钛矿器件热导率低的问题，通过开发大规模半干转移方法将二维hBN集成到PHP CsPbBr₃薄膜上，形成的异质结构热导率显著提高，证明此为增强钙钛矿器件热耗散的有效方法。
AI 中文摘要
金属卤化物钙钛矿半导体是用于光电器件和光子器件的有前途的材料，但其低导热率限制了高激发水平下器件的实际运行。将导热的大带隙二维材料集成到钙钛矿器件中可抑制热积累。本文表明，用少层二维六方氮化硼（hBN）覆盖的平面热压（PHP）溴化铯铅（CsPbBr₃）薄膜在高功率连续波激发下受激光诱导加热的影响比未覆盖的钙钛矿样品小。开发了一种大规模半干转移方法将二维hBN集成到PHP CsPbBr₃薄膜上，该过程与钙钛矿在化学和热方面兼容。微观和光谱分析表明hBN覆盖层不会改变钙钛矿薄膜的形态和光学性质。PHP CsPbBr₃-hBN异质结构的热导率为3W/（m·K），约为裸钙钛矿薄膜0.45W/（m·K）的七倍。热扩散模拟证实了异质结构相对于裸钙钛矿薄膜的热耗散增强。我们的实验证明了一种使用透明、导热二维材料增强钙钛矿器件热耗散的有效方法。
英文摘要
Metal halide perovskite semiconductors are promising materials for optoelectronic and photonic devices, including solar cells and next-generation coherent light sources. However, their low thermal conductivity limits the practical operation of devices under high excitation levels. Integrating thermally conductive, large band-gap two-dimensional (2D) materials into perovskite devices could suppress heat accumulation, while preserving their optical properties. Here, we show that planar hot-pressed (PHP) cesium lead bromide (CsPbBr${_3}$) thin films capped with few-layer 2D hexagonal boron nitride (hBN) are less affected by laser-induced heating under high-power continuous-wave excitation than uncapped perovskite samples. A large-scale semidry transfer method was developed to integrate 2D hBN onto PHP CsPbBr${_3}$ thin films. The process is chemically and thermally compatible with perovskites. Microscopic and spectroscopic analyses show that the hBN capping layer does not alter the morphology and optical properties of the perovskite thin film. The PHP CsPbBr${_3}$-hBN heterostructure exhibits a thermal conductivity of 3 W/(m * K), approximately seven times higher than that of the bare perovskite films of 0.45 W/(m * K). Heat diffusion simulations confirm enhanced heat dissipation in the heterostructure relative to bare perovskite films. Our experiments demonstrate an effective approach to enhancing heat dissipation in perovskite devices using transparent, thermally conductive 2D materials.
