AI 中文总结
研究在顺磁半导体LuFe₂O₄中通过施加电流脉冲操控电荷有序方向，观察到非互易电阻率随符号反转调制，数值计算与实验相符，还展示了非互易电阻存储操作，为电荷有序电子学发展奠定基础。
AI 中文摘要
当原子或离子间相互作用足够强时，它们常周期性排列形成晶体，其排列模式可编码信息，如铁电存储器等设备。研究发现，当库仑相互作用足够强时，凝聚态物质中的电子也能结晶，典型例子是固体中的电荷有序态。本文展示了在顺磁半导体LuFe₂O₄中对电荷有序方向的电子操控和读出。通过在室温下施加电流脉冲，观察到LuFe₂O₄的非互易电阻率随符号反转而调制，在电荷有序温度以上消失。结合受电荷有序影响的带间贝里曲率的数值计算与实验结果一致。还展示了电荷有序的LuFe₂O₄中的非互易电阻存储操作，为实现电荷有序电子学打开了大门。
英文摘要
When interaction among atoms or ions is strong enough, they often arrange periodically, forming a crystal. The arrangement patterns of atoms or ions can encode information, a concept that has enabled devices such as ferroelectric memories. It has been found that not only atoms or ions but also electrons in condensed matter can crystallize when Coulomb interaction is strong enough. Typical examples are charge-ordered states in solids, where different valences, or different electron numbers, of an ion spontaneously form a spatial pattern on the lattice. In such electron crystals, information is expected to be encoded into the electron-ordering patterns. Here, we demonstrate electronic manipulation and readout of charge-ordering directions in a paramagnetic semiconductor LuFe$_2$O$_4$. By applying current pulses at room temperature, we observed that the non-reciprocal resistivity of LuFe$_2$O$_4$ is modulated along with a sign reversal, which disappears above the charge-ordering temperature. A numerical calculation incorporating inter-band Berry curvature affected by the charge ordering is consistent with the experimental results. By applying the observed phenomenon, we also demonstrate a non-reciprocal resistance memory operation in the charge-ordered LuFe$_2$O$_4$. This result opens the door to realizing charge-ordering electronics.
Comments39 pages, 7 figures
