发表机构
Bar-Ilan University（巴伊兰大学）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
研究(2+1)维狄拉克材料整数量子霍尔相的谷霍尔粘度，基于Wigner-Weyl微积分中的等效格林函数公式计算，将经验相对论性Hoyos-Son公式扩展到各谷，评估了偏置伯纳尔双层石墨烯的谷霍尔粘度并讨论测量前景。
AI 中文摘要
我们计算了零温度下Semenoff半导体类石墨烯系统中洛伦兹不变整数量子霍尔相的谷分辨霍尔粘度。基于Kubo形式主义的讨论揭示了单谷粘性霍尔贡献的发散，只有谷求和的霍尔粘度是有限且定义明确的。我们基于Wigner-Weyl微积分中的等效格林函数公式计算霍尔粘度。发现之前确定的发散在谷分辨霍尔粘度的适当表示中似乎被正则化为一个有限值。我们将经验相对论性的Hoyos-Son公式扩展到各个谷。此外，我们在手性费米子低能近似下评估了偏置伯纳尔双层石墨烯的谷（差）霍尔粘度，并讨论了在单层和双层石墨烯以及基于VI族TMD的器件的非局部输运中测量谷霍尔粘度的前景。
英文摘要
We calculate the valley-resolved Hall viscosity for Lorentz-invariant integer quantum Hall phases in Semenoff-semiconducting graphene-like systems at zero temperature. The Kubo formalism based discussion reported in Phys. Rev. B 100, 115421 (2019) revealed the divergence of single valley viscous Hall contributions for this case with only a valley-summed Hall viscosity being finite and therefore well-defined. Our approach to the Hall viscosity calculation is based on an equivalent Green function formulation within Wigner-Weyl calculus. We find that the previously identified divergence may be regularized in a way compatible with both valley-summed Hall viscosity and (non)local Hall conductivity. Together with the local Hall conductivity and its first nonlocal correction, reported as well in Phys. Rev. B 100, 115421 (2019), we extend the empirical relativistic Hoyos-Son formula to individual valleys. Both the original Hoyos-Son formula for Galilean invariant fluids and its relativistic extension to Dirac materials are found to be structurally identical for integer quantum Hall phases and expressible in terms of local electric and viscous Hall responses. In addition we evaluate the valley(-difference) Hall viscosity for biased Bernal bilayer graphene in the chiral fermion low energy approximation using the same regularization prescription. Prospects of measuring valley Hall viscosity in nonlocal transport for mono- and bilayer graphene- and group-VI TMD-based devices are discussed.
Comments12 pages, 2 figures. Revised discussion and added new results
