AI 中文总结
研究InP HEMTs中InₓGa₁₋ₓAs沟道噪声，通过晶圆上和基于LNA测量提取等效漏极噪声温度量化噪声，发现60%铟通道的器件噪声最低，分析了噪声与温度、铟含量关系及噪声来源。
AI 中文摘要
InP高电子迁移率晶体管（HEMT）对射电天文学和量子计算中的低噪声放大器（LNA）不可或缺。InP HEMT中InₓGa₁₋ₓAs沟道组成影响LNA噪声性能，但噪声产生的物理机制未完全明确。本文研究了沟道铟含量为53%、60%和70%的100nm栅长InP HEMTs在4K至300K的InₓGa₁₋ₓAs沟道噪声。通过晶圆上和基于LNA的测量分别在40 - 300K和4 - 40K提取等效漏极噪声温度\(T_d\)来量化沟道噪声。60%铟通道的InP HEMT在整个温度范围内表现出最低的沟道噪声。从晶圆上表征提取的\(T_d\)服从抛物线温度依赖性，这与基于LNA的测量结果很好地预测了所有InP HEMT在4K时的\(T_d\)。通过将沟道噪声表示为一个热噪声项和一个过量噪声项的总和，发现前者随环境温度线性增加并在300K时占主导。4K时的沟道噪声由过量噪声项决定，并且对InP HEMT中的沟道铟含量表现出非单调依赖性。结果表明，InP HEMT中的过量噪声不仅源于与温度无关的散粒噪声，还源于碰撞电离和实空间转移噪声。
英文摘要
The InP high-electron-mobility transistor (HEMT) is indispensable for low-noise amplifiers (LNAs) in radio astronomy and quantum computing. The composition of the $\mathrm{In_{x}Ga_{1-x}As}$ channel in InP HEMT is known to influence the LNA noise performance. However, the various physical mechanisms responsible for noise generation are not fully characterized and understood. Here, we investigate the $\mathrm{In_{x}Ga_{1-x}As}$ channel noise from 4 K to 300 K for 100-nm gate-length InP HEMTs with channel indium content of 53\%, 60\% and 70\%. Channel noise was quantified by extracting the equivalent drain noise temperature $\mathit{T}_{d}$ using both on-wafer and LNA-based measurements, covering 40-300 K and 4-40 K, respectively. The 60\% indium channel InP HEMT exhibited the lowest channel noise across the full temperature range. The $\mathit{T}_{d}$ extracted from on-wafer characterization was found to obey a parabolic temperature dependence which predicted the $\mathit{T}_{d}$ at 4 K for all InP HEMTs in good agreement with LNA-based measurements. By expressing the channel noise as the sum of one thermal and one excess noise term, it was found that the former increased linearly with ambient temperature and dominated at 300 K. The channel noise at 4 K was determined by the excess noise term and exhibited a non-monotonic dependence on the channel indium content in the InP HEMT. The results suggest that the excess noise in the InP HEMT originates not only from temperature-independent shot noise but also from impact ionization and real-space transfer noise.
Journal refIEEE Journal of the Electron Devices Society, vol. 14, pp. 820-827, 2026
