通过同步双束2微米激光照射实现极紫外转换效率提升40%
40% boost in extreme ultraviolet conversion efficiency via simultaneous dual-beam 2-μm laser irradiation
AI总结：
采用2090 nm Ho:YAG激光同步双束照射平面Sn靶，在相同总能量下将EUV转换效率从2.6%提升至3.6%，创下2微米驱动激光等离子体源的最高纪录，且等离子体条件基本不变。
摘要：
为下一代光刻技术提升极紫外（EUV）光源功率，需要在降低单脉冲能量的同时提高转换效率（CE）。我们通过使用2090 nm、20 ns的Ho:YAG激光同步双束照射平面Sn靶，实现了40%的CE增强。单束40 mJ照射的EUV CE为2.6%；将相同总能量等分为两束各20 mJ（峰值强度相同）后，EUV CE提升至3.6%，这是2微米驱动激光等离子体源中报道的最高值。两种配置下的EUV源尺寸（60-70 μm）和离子能谱几乎相同，证实了等离子体条件相当。由于该方案仅需被动分束，且易于扩展至三束或更多，它为高数值孔径和超数值孔径光刻提供了实现多千瓦级、节能型EUV源的实用途径。
英文摘要：
Scaling extreme ultraviolet (EUV) source power for next-generation lithography demands higher conversion efficiency (CE) at reduced per-pulse energies. We demonstrated a 40% CE enhancement by simultaneous dual-beam irradiation of a planar Sn target with a 2090-nm, 20-ns Ho:YAG laser. Single-beam irradiation at 40 mJ yielded an EUV CE of 2.6%; splitting the same total energy equally into two beams of 20 mJ each - at identical peak intensity - raised the EUV CE to 3.6%, which was the highest reported for 2-μm-driven laser-produced plasma sources. The EUV source size (60-70 μm) and energetic-ion spectra were nearly identical across both configurations, confirming comparable plasma conditions. Because the scheme requires only passive beam splitting and scales readily to three or more beams, it offers a practical route toward multi-kW-class, energy-efficient EUV sources for high-NA and hyper-NA lithography.
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