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arXiv 2604.21702cond-mat.mes-hallcond-mat.dis-nn
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二阶拓扑绝缘体磁畴壁中无序诱导的从相位平均到模式混合区域的交叉

Disorder-induced crossover from phase-averaging to mode-mixing regimes in magnetic domain walls of a second-order topological insulator

School of Physics and Technology, Nanjing Normal University(南京师范大学物理科学与技术学院)

Dong Zhou, Zhe Hou

AI总结:

本研究探究三维二阶拓扑绝缘体磁畴壁的电子输运,通过理论分析发现无序可诱导其输运从相位平均区域交叉到模式混合区域,且二阶电导累积量可用于识别该输运区域。

摘要:

我们研究了受安德森无序作用的三维(3D)二阶拓扑绝缘体中磁畴壁(DW)的电子输运。在清洁极限下,该DW承载着两条同向传播的一维(1D)拓扑边缘态,它们充当有效阿哈罗诺夫-玻姆(AB)干涉仪的两个臂,诱导出正弦形式的电导振荡。引入无序后,AB振荡被抑制,而系综平均电导出现半量子平台,数值为0.5 e²/h。值得注意的是,在该平台内,电导涨落呈现出独特的两步平台结构:中等无序下数值约为0.35 e²/h,强无序下形成第二个平台,数值约为0.29 e²/h。通过建立考虑两臂随机相位干涉和模式间混合的理论框架,我们确定第一个涨落平台是相位平均区域(PAR)的特征,第二个是模式混合区域(MMR)的特征。此外,我们表明,在PAR中电导遵循U型beta分布,而在MMR中演变为均匀分布。还计算了与散粒噪声相关的法诺因子,其呈现类似的两步平台结构,数值分别为1/4和1/3,对应PAR和MMR。本研究清晰展示了无序诱导的从PAR到MMR的交叉,并强调了二阶电导累积量在识别这些输运区域中的关键作用。结果表明,无序工程是控制基于DW器件电子输运的有力途径。

英文摘要:

We investigate electronic transport across a magnetic domain wall (DW) in a three-dimensional (3D) second-order topological insulator subject to Anderson disorder. In the clean limit, the DW hosts two co-propagating one-dimensional (1D) topological edge states that act as the two arms of an effective Aharonov-Bohm (AB) interferometer, inducing a sinusoidal conductance oscillation. Upon the introduction of disorder, the AB oscillations are suppressed, while a half-quantized plateau of $0.5 e^2/h$ for the ensemble-averaged conductance emerges. Notably, within this plateau, the conductance fluctuation exhibits a distinctive two-step plateau structure, with values of $\sim 0.35 e^2/h$ at moderate disorder, followed by a second plateau at $\sim0.29 e^2/h$ under strong disorder. By developing theoretical frameworks that account for the random-phase interference and inter-mode mixing of the two arms, we identify the first fluctuation plateau as a signature of the phase-averaging regime (PAR) and the second as a signature of the mode-mixing regime (MMR). Furthermore, we show that, in the PAR the conductance follows a U-shaped beta distribution, while it evolves into a uniform distribution in the MMR. The Fano factor associated with shot noise is also computed, which exhibits a similar two-step plateau structure at $1/4$ and $1/3$, corresponding to the PAR and MMR, respectively. Our work provides a clear demonstration of the disorder-induced crossover from PAR to MMR, and highlights the crucial role of second-order conductance cumulants in identifying these transport regimes. The results suggest disorder-engineering as a powerful route for controlling electronic transport across DW-based devices.

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