全部通过MOCVD生长的AlScN/GaN MIS-HEMTs在半绝缘GaN基板上的微波性能
Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates
AI总结：
研究报道了全部通过MOCVD生长的长栅AlScN/GaN金属-绝缘体-半导体高频晶体管在半绝缘GaN基板上的设计、制造和表征，展示了高电迁移率晶体管在高频和高功率应用中的稳健性。
摘要：
我们报告了全部通过MOCVD生长的长栅AlScN/GaN金属-绝缘体-半导体高频晶体管（MIS-HEMTs）在半绝缘GaN基板上的设计、制造和表征。具有1μm栅长和0.9μm栅漏间距的器件表现出最大漏电流密度为1A/mm，开启/关闭电流比为2×10⁵，三端击穿电压为63V。器件具有接近理想的亚阈值特性，亚阈值摆动为63mV/dec，由于优异的界面质量与陷阱密度（D_it）为2.11×10¹¹ cm⁻²eV⁻¹和半绝缘GaN基板的低螺纹位错密度，10V时电流分散率低至7.8%。小信号RF测量显示f_T/f_max为25.8/51.1GHz，而大信号负载拉特性在10GHz下显示输出功率密度为4.04W/mm，功率附加效率为22.7%。此外，在100mA/mm至700mA/mm的宽漏电流范围内，测得低于2.5dB的最小噪声图。这些结果将先前短栅MOCVD生长的AlScN/GaN HEMTs的演示扩展到长栅、高电压领域，确认了该材料系统在高频和高功率器件应用中的稳健性，具有良好的微波噪声性能。
英文摘要：
We report on the design, fabrication, and characterization of all MOCVD-grown long-gate AlScN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) on semi-insulating GaN substrates. Devices with a gate length of $1~μ$m and gate-drain spacing of $0.9~μ$ m exhibit a maximum drain current density of 1 A/mm, an on/off current ratio of $2\times 10^5$, and a three-terminal breakdown voltage of 63 V. The device has near-ideal subthreshold characteristics with a subthreshold swing of 63 mV/dec and a current dispersion as low as 7.8$\%$ at 10 V due to the excellent interfacial quality with a trap density ($D_\mathrm{it}$) of $2.11\times{10}^{11}~\mathrm{cm}^{-2}eV^{-1}$ and the semi-insulating GaN substrate with a low threading dislocation density. Small-signal RF measurements reveal an $f_\mathrm{T}/f_\mathrm{max}$ of 25.8/51.1 GHz, while large-signal load-pull characterization at 10 GHz demonstrates an output power density of 4.04 W/mm with a power-added efficiency of 22.7$\%$. In addition, a minimum noise figure below 2.5 dB was measured over a wide drain current range from 100 mA/mm to 700 mA/mm below 6 GHz. These results extend previous demonstrations of short-gate MOCVD-grown AlScN/GaN HEMTs to the long-gate, high-voltage regime, confirming the robustness of this material system for both high-frequency and high-power device applications with favorable microwave noise performance.
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