通过单轴应变区分显性和隐性反铁磁性
Distinguishing apparent and hidden altermagnetism via uniaxial strain in $\mathrm{CsV_2Te_2O}$-family
AI总结：
研究通过单轴应变区分CsV2Te2O家族中显性和隐性反铁磁性，利用压磁效应揭示其磁矩差异，验证了该方法的可行性。
摘要：
隐性反铁磁性已在金属Cs_{1-δ}V_2Te_2O中被理论提出并实验确认，其表现出两种近简并的基态磁构型（C型和G型），分别对应显性和隐性反铁磁性。本文提出利用平面单轴应变区分显性和隐性反铁磁性。在单轴应变下，显性反铁磁性表现出明显的净磁矩，而隐性反铁磁性保持零净磁矩。此处由单轴应变引起的磁矩，即压磁效应，不同于半导体中通过应变后掺杂载流子生成净磁性的方法。第一性原理计算验证了我们的提案，揭示了C型反铁磁性CsV2Te2O中由单轴应变引起的磁矩远大于之前研究的反铁磁性半导体。此外，我们还研究了具有类似晶体结构的半导体在单轴应变下的电子态转变，并通过第一性原理计算验证了该提案。我们的工作为区分Cs_{1-δ}V_2Te_2O材料中的显性和隐性反铁磁性提供了实验可行的策略，并扩展了压磁效应的物理意义，该效应可在实验可合成的KV2Se2O和Rb_{1-δ}V2Te2O中直接验证。
英文摘要：
The hidden altermagnetism has been theoretically proposed and then experimentally confirmed in metal $\mathrm{Cs_{1-δ}V_2Te_2O}$, which exhibits two nearly degenerate ground-state magnetic configurations (C-type and G-type) corresponding respectively to apparent and hidden altermagnetism. Here, we propose that in-plane uniaxial strain can be utilized to distinguish apparent and hidden altermagnetism. Under uniaxial strain, apparent altermagnetism exhibits an obvious net magnetic moment, whereas hidden altermagnetism maintains zero net magnetic moment. The magnetic moment induced by uniaxial strain here, namely the piezomagnetic effect, differs from that in semiconductors, where strain must be applied first followed by carrier doping to generate net magnetism. First-principles calculations verify our proposal, revealing that the magnetic moment induced by uniaxial strain in C-type antiferromagnetic $\mathrm{CsV_2Te_2O}$ is much larger than that in the previously studied altermagnetic semiconductors. Furthermore, we also investigate the electronic state transitions of semiconductors featuring a crystal structure analogous to $\mathrm{CsV_2Te_2O}$ under uniaxial strain, and verify our proposal in specific material via first-principles calculations. Our work provides an experimentally feasible strategy to distinguish apparent and hidden altermagnetism in material $\mathrm{Cs_{1-δ}V_2Te_2O}$, and extends the physical implication of the piezomagnetic effect, which can be directly verified in experimentally synthesizable $\mathrm{KV_2Se_2O}$ and $\mathrm{Rb_{1-δ}V_2Te_2O}$.
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