基于衬底嵌入硅纳米环阵列的宽频带非对称传输
Broadband Asymmetric Transmission with Wide Spectral Tunability based on Substrate-Embedded Silicon Nanoring Arrays
AI总结：
本文提出基于硅纳米环阵列的宽频带非对称传输装置，实现近红外1750-2400nm范围内高前向透射率与低后向透射率，隔离比达17.8dB，具备宽谱调谐能力。
摘要：
本文理论提出基于周期性硅纳米环阵列嵌入二氧化硅衬底的宽频带非对称传输（AT）装置。结果表明，该装置在近红外区域（1750-2400nm）实现显著的宽频带非对称传输效应，前向透射率超过0.8（最大0.98），后向透射率低于0.15（最小0.015），隔离比（IR）在2280nm处达到最大17.8dB。此外，通过均匀缩放结构，透射谱展现出优异的可扩展性和可调性，使工作带宽可扩展至890-3300nm。该基于硅的纳米结构为光隔离、多通道传感和集成光子电路提供了稳健且灵活的平台。
英文摘要：
In this work, we theoretically propose a broadband asymmetric transmission (AT) device based on periodic Si nanoring arrays embedded in a SiO2 substrate. Results indicate that the device achieves a remarkable broadband AT effect in the near-infrared region (1750-2400 nm), with forward transmissivity exceeding 0.8 (maximum of 0.98), backward transmissivity less than 0.15 (minimum of 0.015) and an isolation ratio (IR) reaching a maximum of 17.8 dB at 2280 nm. Furthermore, the transmissivity spectrum exhibits excellent scalability and tunability through uniform scaling of the structure, allowing the operational band to be tailored across a wide spectral range, from 890 to 3300 nm. This Si-based nanostructure offers a robust and flexible platform for applications in optical isolation, multi-channel sensing, and integrated photonic circuits.
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