冷坩埚法生长的块体$β$-Ga$_2$O$_3$晶体的同步辐射X射线形貌和网格成像
Synchrotron-radiation X-ray topography and reticulography of bulk $β$-Ga$_2$O$_3$ crystals grown by the cold crucible method
AI总结：
利用同步辐射X射线形貌和网格成像技术，研究了冷坩埚法生长的$β$-Ga$_2$O$_3$单晶的结构缺陷，发现籽晶下方区域质量高，扩径时产生扭转晶格取向差，且<010>取向的螺位错占主导。
摘要：
采用同步辐射X射线形貌和X射线网格成像技术，研究了通过氧化物晶体生长冷坩埚（OCCC）法生长的$β$-Ga$_2$O$_3$单晶的结构性质。籽晶下方生长的区域表现出高结晶质量，摇摆曲线半高宽约为26角秒。在直径扩大过程中，中心区域和横向扩展区域之间出现了扭转型晶格取向差，起源于肩部附近并沿平行于<010>生长方向的边界传播。位错分析表明，<010>取向的螺位错在缺陷结构中占主导地位，密度约为$10^{5}$cm$^{-2}$，而在翼区出现更高的密度（约$10^{6}$cm$^{-2}$）。这些结果阐明了OCCC法生长的$β$-Ga$_2$O$_3$中缺陷的形成，并为优化生长条件提供了见解。
英文摘要：
The structural properties of a $β$-Ga$_2$O$_3$ single crystal grown by the oxide crystal growth from cold crucible (OCCC) method were investigated using synchrotron radiation X-ray topography and X-ray reticulography. The region grown beneath the seed exhibits high crystalline quality with a rocking curve full width at half maximum of about 26 arcsec. During diameter enlargement, a twist-type lattice misorientation develops between the central and laterally expanded regions, originating near the shoulder and propagating along boundaries parallel to the $\langle010\rangle$ growth direction. Dislocation analysis reveals that $\langle010\rangle$-oriented screw dislocations dominate the defect structure with densities of ~$10^{5}$cm$^{-2}$, while higher densities (~$10^{6}$cm$^{-2}$) appear in the wing region. These results clarify defect formation in OCCC-grown $β$-Ga$_2$O$_3$ and provide insights for optimizing growth conditions.
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