Li掺杂Bi-2223超导体通过Pechini溶胶-凝胶合成中阳离子分子混合制备的临界温度$T_c$指纹
Fingerprint of $T_c$ advancement in Li-doped Bi-2223 superconductors prepared by cationic molecular mixing within Pechini sol-gel synthesis
AI总结：
本研究通过Pechini溶胶-凝胶合成法制备Li掺杂Bi-2223超导体，发现5%Li掺杂样品具有最高临界温度111.4K，并揭示了量子磁通形成机制。
摘要：
三层层状Bi-2223超导体在铋基铜酸盐中具有最高的临界温度$T_c$，象征着研究内在超导性质的理想原型。先前的固态反应方法证实了高质量Bi-2223化合物的生长，但伴随着多个研磨、压片以及煅烧阶段的过度繁琐时间和努力，%导致组分损失的风险，因此寻找更不繁琐的合成路径是必要的。在这里，我们提出了一种先进的溶胶-凝胶合成方法，用于组装Bi1.4Pb0.6Sr2Ca2(Cu1-xLix)3O10超导体（Li掺杂Bi-2223）的多组分复杂性，其中$x$=0.0--0.20，利用化学Pechini聚酯化路线中的金属阳离子分子混合，随后进行单步裂解和烧结阶段。尽管单价阳离子如Li$^+$在Pechini方法中建立复杂的交联网络或螯合机制存在限制，但它们代表了独特的探针，用于阐明聚合过程中的主要化学过程。我们观察到，5摩尔%Li掺杂的样品在系列样品中表现出最高的$T_c$=111.4 K，通过交流磁滞和直流电阻率测量得到证实，并与我们先前的固态制备方法得到的值相等。此外，我们展示了在微观结构探针下罕见的逐层晶体生长观测。通过分析在低磁场范围内宽频程内的可靠交流磁滞数据，我们通过安德森-穆勒模型和科尔-科尔图提供量子磁通形成和磁通渗流机制。
英文摘要：
Trilayered Bi-2223 superconductor features the highest critical temperature $T_c$ among the bismuth-based cuprate collection and symbolizes an ideal prototype for studying intrinsic superconducting properties. The previous solid-state reaction method substantiated the growth of the high-quality Bi-2223 compounds but was accompanied by excessively laborious time and effort in terms of multiple grinding, pressing, as well as calcining stages, %causing risk of constituent loss, so finding a less tedious synthesis path is imperative. Here, we present an advanced sol-gel synthesis for assembling the multicomponent complexity of Bi1.4Pb0.6Sr2Ca2(Cu1-xLix)3O10 superconductors (Li-doped Bi-2223), with $x$ = 0.0--0.20, utilizing metallic cationic molecular mixing within the chemical Pechini polyesterization route followed by single-step pyrolysis and sintering stages. Although monovalent cations such as Li$^+$ pose limitations in establishing a perplex crosslinking network or chelating mechanism in the Pechini method, they represent a unique probe to elucidate the major chemical process during polymerization. We observe that a 5 molar~\% Li-doped sample pronounces the highest $T_c$ = 111.4 K among the series of samples, as confirmed by both ac susceptibility and dc resistivity measurements, and is equivalent to the value obtained by our preceding solid state fabrication. In addition, we showcase a rare observation of layer-by-layer crystalline phase growth under microstructure probe. Through analyzing the reliable ac susceptibility data at low magnetic fields in a wide range of frequency, we provide the quantum flux formation and flux creep mechanism by Anderson-Müller's model and Cole-Cole plot.
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