CMOS SPADs的特性化用于未来RICH探测器
Characterization of CMOS SPADs for future RICH Detectors
AI总结：
本文研究了适用于未来RICH探测器的CMOS SPAD光电探测器的特性，重点在于其在高辐射环境下的性能和低温操作能力。
摘要：
在计划或考虑升级的LHCb、ALICE和Belle II实验中，环状影像切伦科夫（RICH）探测器必须得到改进，以在增加的束流相互作用密度下运行。未来RICH探测器中使用的光电探测器必须提供高分辨力、单光子灵敏度和优异的时序性能，同时在整个实验运行时间内暴露在约10^13 1 MeV中子等效剂量/平方厘米的背景辐射下。spadRICH项目正在开发一种基于CMOS单光子雪崩二极管（SPAD）的光电探测器，专门优化用于计划的RICH探测器应用，包括中子辐射耐受性和低温操作。在本工作中，我们展示了现有SPADs在55 nm BCD和110 nm CMOS图像传感器技术中最近的实验特性研究。主要结果包括对SPADs进行辐射至10^12 1 MeV中子等效剂量/平方厘米并冷却至液氮温度后的暗计数率（DCR）测量。
英文摘要：
In the planned or considered upgrades of LHCb, ALICE and Belle II experiments, the Ring imaging Cherenkov (RICH) detectors will have to be improved in order to function at increased beam interaction density. The photodetectors used in future RICH detector will have to provide high granularity, single photon sensitivity and excellent timing, while being exposed to a couple of 10$^{13}$ 1-MeV neutron equivalent/cm$^2$ of background irradiation during total experiment run time. The spadRICH project is developing a CMOS single-photon avalanche diode (SPAD) based photodetector specifically optimized for the application of the planned RICH detectors, which includes neutron radiation hardness and cryogenic operation. In this work we present recent experimental characterization studies of existing SPADs produced in 55 nm BCD and 110 nm CMOS image sensor technologies. Main results include dark count rate (DCR) measurements with SPADs irradiated up to 10$^{12}$ 1-MeV neutron equivalent/cm$^2$ and cooled down to liquid nitrogen temperature.
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