渗透不稳定性与1T-TaS₂的稀疏极限分形
Percolative Instabilities and Sparse-Limit Fractality in 1T-TaS$_2$
AI总结：
研究揭示了1T-TaS₂低温金属相的渗透不稳定性与稀疏极限分形特性，通过电脉冲驱动和二次谐波响应发现导电路径的分层演化及非平衡相变机制。
摘要：
1T-TaS₂的低温金属相可能源于在强相关莫特绝缘体中由电流和电压驱动的调和电荷密度波（CDW）的不稳定性，以及内在电子畸变的稳健但很少实现的影响。电脉冲驱动的输运结合二次谐波响应，揭示了突变切换、负微分电阻（NDR）和多尺度域墙重组。自由能分析确定了莫特-金属转变的临界序参数阈值，其标度指数（β约1.3）与二维渗透一致。稀疏极限分形维数D_f在10 K时约为0.3，在300 K时上升至约0.9，反映了温度变化过程中导电路径的分层演化。这些发现建立了分形渗透、脉冲诱导不稳定性与相关电子输运之间的直接联系，为低维量子材料中非平衡相变的受控访问提供了框架。
英文摘要：
The low-temperature metallic phase of 1T-TaS2 may originate from current- and voltage-driven destabilization of the commensurate charge density wave (CDW) in a strongly correlated Mott insulator, alongside the robust yet rarely realized influence of intrinsic electronic distortions. Electrical pulse-driven transport, combined with second harmonic response, reveals abrupt switching, negative differential resistance (NDR), and multiscale domain-wall reorganization. The free energy analysis identifies a critical order parameter threshold for the Mott-metal transition, with scaling exponents (β approx 1.3) consistent with 2D percolation. The sparse limit fractal dimension D_{f} approx 0.3 at 10 K, rising to approx 0.9 at 300 K, reflects the hierarchical evolution of the conductive pathways throughout the temperature. These findings establish a direct connection between fractal percolation, pulse-induced instabilities, and correlated electron transport, offering a framework for controlled access to non-equilibrium phase transitions in low-dimensional quantum materials.
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