arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2602.07976cond-mat.mtrl-scicond-mat.mes-hall
收藏

揭示反位缺陷对Few-layer MnBi2Te4磁转变的影响:原位加热实验

Unveiling the impact of anti-site defects in magnetic transitions of few-layer MnBi2Te4 by operando heating

State Key Laboratory of Surface Physics and Department of Physics, Fudan University(复旦大学表面物理国家重点实验室和物理系);Institute for Nanoelectronic Devices and Quantum Computing, Fudan University(复旦大学纳米电子器件与量子计算研究所);Key Laboratory of Micro and Nano Photonic Structures (MOE), Fudan University(复旦大学微纳光子结构教育部重点实验室);Shanghai Branch, Hefei National Laboratory(合肥国家实验室上海分部);Shanghai Research Center for Quantum Sciences(上海量子科学研究中心);New Cornerstone Science Laboratory(新基石科学实验室)

Xinyu Chen, Jingjing Gao, Shuang Wu, Zhiwei Huang, Zhongxun Guo, Canyu Hong, Ruohan Chen, Mingyan Luo, Zhaochen Liu, Zeyuan Sun, Wei Ruan, Jing Wang, Yuanbo Zhang, Shiwei Wu

AI总结:

通过原位加热实验揭示反位缺陷对Few-layer MnBi2Te4磁转变的影响,发现热冲击显著影响磁性行为,为评估样品质量提供参考。

摘要:

作为首个实验发现的本征磁性拓扑绝缘体,MnBi2Te4吸引了广泛关注,为探索拓扑量子相提供了独特平台,如量子反常霍尔效应和轴子绝缘体状态。尽管已识别出越来越多影响样品的因素,但获得高质量器件性能并实现期望的拓扑量子相仍是一个挑战。在本工作中,通过比较不同缺陷密度的晶体的反射磁圆二色性(RMCD)并用原子级分辨扫描隧道显微镜表征,我们证明反位缺陷在实现理想磁态中起关键作用。通过测量原位加热下的RMCD滞后回线,我们发现MnBi2Te4少层样品对热冲击极为敏感,即使在45°C低温下也是如此。加热处理样品的磁行为类似于制成器件的样品,揭示了热冲击对器件的影响。从具有理想层依赖磁序的少层结构出发,热加热导致磁化和奇数层与偶数层之间转换场的收敛。观察到的加热诱导磁性演变可作为评估样品质量和反位缺陷密度的宝贵参考。我们的发现不仅指出了MnBi2Te4中长期存在的隐藏因素,引发了争议,还为可控工程拓扑量子现象铺平了道路。

英文摘要:

As the first experimentally discovered intrinsic magnetic topological insulator, MnBi2Te4 has attracted widespread attentions, providing a unique platform for the exploration of topological quantum phases, such as quantum anomalous Hall effect and axion insulator state. Despite the increasing number of potential factors affecting samples being identified, obtaining the high-quality device performance with desired topological quantum phases remains a challenge. In this work, by comparing the reflective magnetic circular dichroism (RMCD) of crystals with different defect densities that are characterized by atomically resolved scanning tunneling microscopy, we demonstrate that anti-site defects play an essential role in achieving ideal magnetic states. By measuring RMCD hysteresis loops with operando heating, we find that MnBi2Te4 few-layer samples are highly susceptible to thermal impact, even at temperature as low as 45°C. The magnetic behavior of heating-treated samples is akin to that of samples fabricated into devices, revealing the thermal impact on devices as well. Starting from few-layers with ideal layer-dependent magnetic order, thermal heating leads to the convergence of magnetization and transition fields between odd- and even-layers. The observed heating-induced magnetic evolution can serve as a valuable reference for assessing the sample quality or the density of anti-site defects. Our findings not only point out the long-standing hidden factor that arose controversies in MnBi2Te4, but also pave the way for controllably engineering the topological quantum phenomena.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑