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arXiv 2602.04854cond-mat.mes-hallmath-phmath.MPquant-ph
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二维d波交替磁体中实空间和动量空间拓扑相的分析

Real and momentum space analysis of topological phases in 2D d-wave altermagnets

University of Granada(格拉纳达大学)

Manuel Calixto

AI总结:

本文通过紧束缚哈密顿量分析二维d波交替磁体的拓扑相变,揭示狄拉克节点点和 Berry 曲率奇异性的形成,并探讨边缘态拓扑性质,提出新型拓扑交替磁电场效应晶体管设计。

摘要:

交替磁性最近作为一种第三种基本磁性分支出现,结合反铁磁体的净磁化为零与铁磁体的高动量依赖性自旋分裂。本研究对二维d波交替磁体的拓扑相进行全面的实-动量空间分析。通过紧束缚哈密顿量,我们表征了临界内子晶格跃迁强度(t_a^C)处的拓扑相变。我们考察了狄拉克节点点的出现及其导致的 Berry 曲率奇异性和伪自旋纹理缠绕的视觉分析。关键地,我们分析了自旋分裂、有效交替磁性强度,并研究了这些相的传输影响,揭示了巨电导各向异性及由费米面内群速度分布驱动的自旋依赖的『操控』效应。除了体性质外,我们通过信息论标记如保真度-磁化率和反参与率的视角分析了ribbon几何中的边缘态拓扑性质,提供了一种不依赖平移对称性的传统陈数计算的稳健替代方案。我们的结果表明,超窄纳米带中边缘态的混合在超窄纳米带中打开可控的能隙,我们利用这一特性提出了一种新型拓扑交替磁电场效应晶体管设计,其中球面和空间自旋极化传输可以电静力学门控。本工作建立了交替磁性材料中『边缘电子学』的理论和信息论框架,为下一代高速自旋电子和『自旋分裂器』逻辑器件和架构铺平了道路。

英文摘要:

Altermagnetism has recently emerged as a third fundamental branch of magnetism, combining the vanishing net magnetization of antiferromagnets with the high-momentum-dependent spin splitting of ferromagnets. This study provides a comprehensive real- and momentum-space analysis of topological phases in two-dimensional d-wave altermagnets. By employing a tight-binding Hamiltonian, we characterize the topological phase transition occurring at a critical intra-sublattice hopping strength ($t_a^C$). We examine the emergence of Dirac nodal points and the resulting Berry curvature singularities, supported by a visual analysis of pseudospin texture winding. Crucially, we analize spin splitting, effective altermagnetic strength, and investigate the transport implications of these phases, uncovering giant conductivity anisotropy and spin-dependent ``steering'' effects driven by group velocity distribution across the Fermi surface. Beyond bulk properties, we analyze the edge state topology in ribbon geometries through the lens of information-theoretic markers like fidelity-susceptibility and inverse participation ratio, offering a robust alternative to traditional Chern number calculations, without relying on translational symmetry. Our results demonstrate that the hybridization of edge states in ultra-narrow nanoribbons opens a controllable energy gap, a feature we exploit to propose a novel topological altermagnetic field-effect transistor design where ballistic and spatially spin-polarized transport can be electrostatically gated. This work establishes a theoretical and information-theoretic framework for ``edgetronics'' in altermagnetic materials, paving the way for next-generation, high-speed spintronic and ``spin-splitter'' logic devices and architectures.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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