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arXiv 2602.04469cond-mat.mtrl-sci

锗60度位错的电子态、自旋轨道耦合与磁性

Electronic States, Spin-Orbit Coupling and Magnetism in Germanium 60° Dislocations

University of Milano-Bicocca(米兰比可卡大学)

Veronica Regazzoni, Fabrizio Rovaris, Anna Marzegalli, Francesco Montalenti, Emilio Scalise

AI总结:

本研究通过DFT计算揭示了锗60度位错诱导的电子态、自旋轨道耦合和磁性特性,发现位错排列可稳定反铁磁有序并产生显著磁矩。

摘要:

半导体中的缺陷最近因其在新型量子应用中的潜力而重新引起了关注。本文研究了锗中60度位错诱导的电子和磁性性质。利用大规模DFT计算,我们确定了shuffle和glide集在其最低能量配置中的能带结构。我们还进行了带电缺陷计算,以帮助解释在外延锗层中观察到的复杂光电发光光谱。shuffle集的能带结构揭示了由缺陷引起的分散能带,这些能带位于Γ点附近的带隙内,而glide集则显示出与导带的强重叠。远离Γ点的缺陷诱导能带分裂揭示了Rashba-Dresselhaus自旋轨道耦合效应,这种效应之前仅在螺旋位错中报告过。令人惊讶的是,我们发现特定的位错排列可以稳定反铁磁有序,并具有较大的局部磁矩和显著的相反自旋状态之间的交换分裂。这些结果通过自旋轨道耦合和磁有序的结合揭示了锗位错中的丰富物理,可能为锗器件中的新型缺陷基功能提供可能。

英文摘要:

Defects in semiconductors have recently attracted renewed interest owing to their potential in novel quantum applications. Here we investigate the electronic and magnetic properties induced by 60° dislocations in Ge. Using large-scale DFT calculations, we determine the band structure for both the shuffle and glide sets in their lowest-energy configurations. The band structure for the shuffle set reveals defect-induced dispersive bands localized within the band gap near the $Γ$ point, whereas for the glide set, we observe strong overlap with the conduction band. Defect-induced band splitting evident away from $Γ$ reveals Rashba-Dresselhaus spin-orbit coupling, an effect previously reported only for screw dislocations. Remarkably, we find evidence that specific dislocation arrangements can stabilize antiferromagnetic ordering with sizable local magnetic moments and considerable exchange splitting between opposite spin states. These results uncover rich physics in Ge dislocations through the combination of spin-orbit coupling and magnetic ordering, potentially enabling novel defect-based functionalities in Ge devices.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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