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arXiv 2511.02440physics.opticscond-mat.mes-hall
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集成光子学中片上全光磁化开关的实验演示

Demonstration of on-chip all-optical switching of magnetization in integrated photonics

Eindhoven University of Technology(埃因霍温理工大学);LioniX International(LioniX国际公司)

Pingzhi Li, Gijs W. A. Simons, Tianyu Zhang, Philip P. J. Schrinner, Sohrab Kamyar, Ronald Dekker, Diana C. Leitao, Reinoud Lavrijsen, Yuqing Jiao, Bert Koopmans

AI总结:

本研究在氮化硅光子集成电路中实现片上单脉冲全光磁化开关,证实亚微米器件开关对比度可达90%,揭示器件尺寸对开关性能的关键影响,为集成自旋电子-光子平台奠定基础。

摘要:

超快全光磁化开关(AOS)在下一代自旋电子存储器以及自旋电子-光子混合系统中具有广阔应用前景。但目前绝大多数实现方案都依赖庞大的自由空间光学装置,限制了可扩展性与实际集成能力。作为迈向集成应用的关键一步,我们在氮化硅(Si₃N₄)光子集成电路中实现了单脉冲AOS。利用经片上波导传输的飞秒激光脉冲序列,我们在直接制备于光子波导顶部的亚微米面外取向Co/Gd霍尔交叉结构中实现了确定性翻转开关。通过反常霍尔效应进行电学读出的结果显示,500纳米宽的器件开关对比度最高可达90%。在尺寸更大的霍尔交叉结构中,开关对比度下降且开关行为变为随机性,这与有限元模拟证实的空间非均匀光吸收现象一致。我们推测该行为源于部分开关区域内的畴壁弛豫以及热辅助(退)钉扎过程。本研究结果凸显了器件尺寸调控对实现可靠片上AOS的关键作用,为构建超快、节能且完全集成的自旋电子-光子平台奠定了基础。

英文摘要:

Ultrafast all-optical magnetization switching (AOS) holds great promise for nextgeneration spintronic memory and hybrid spintronic-photonic systems. However, most implementations to date rely on bulky free-space optical setups, limiting scalability and practical integration. As a critical step toward integrated applications, we demonstrate single-pulse AOS within a silicon nitride (Si3N4) photonic integrated circuit. Using trains of femtosecond laser pulses guided through on-chip waveguides, we achieve deterministic toggle switching in a sub-micron out-of-plane Co/Gd Hall cross patterned directly atop the photonic waveguide. Electrical readout via the anomalous Hall effect reveals a switching contrast of up to 90% for 500 nm-wide devices. In larger Hall crosses, the contrast decreases and switching becomes stochastic, consistent with spatially non-uniform optical absorption as confirmed by finite-element simulations. This behavior is hypothetically attributed to domain wall relaxation and thermally assisted (de)pinning processes within partially switched regions. Our results highlight the critical role of device scaling in achieving robust on-chip AOS and establish a foundation for ultrafast, energy-efficient, and fully integrated spintronic-photonic platforms.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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