具有旋转断层的多层石墨烯/n型硅肖特基结的光伏性能
Photovoltaic Performance of a Rotationally Faulted Multilayer Graphene/n-Si Schottky Junction
AI总结：
本研究制备了旋转断层多层石墨烯/n型硅肖特基结器件，通过低成本无聚合物转移工艺实现，其光伏性能可与单层石墨烯器件相当，展现出光电子应用潜力。
摘要：
我们报道了具有旋转断层的多层石墨烯（rf-MLG）/n型硅（n-Si）肖特基结器件的制备及其光伏性能。我们采用5μm镍箔作为催化剂，通过化学气相沉积法合成了厚度可控的rf-MLG，并通过无聚合物工艺将其转移至n-Si衬底上，实现了简便且低成本的制备。该器件的理想因子为1.67，在±1.0V电压下的整流因子约为4×10^5，肖特基势垒高度为0.83eV。我们还观察到光强与光电流之间存在强线性关系。此外，该器件在540nm波长处的峰值外量子效率约为26%，在410nm波长处的峰值内量子效率约为97%。瞬态光电流和光伏测量结果显示，电荷提取时间约为1微秒，复合时间则为几毫秒，表明其在光伏应用中具备有效的电荷收集能力。这些结果表明rf-MLG/n-Si肖特基结构建良好，性能可与单层石墨烯（SLG）器件相媲美，展现出其在光电子应用中的潜力。
英文摘要：
We report the fabrication and photovoltaic performance of a rotationally faulted multilayer graphene (rf-MLG)/n-Si Schottky junction device. A thickness-controlled rf-MLG is synthesized using a 5 μm Ni foil catalyst via the chemical vapor deposition method and transferred to the n-Si substrate via a polymer-free process, enabling facile and cost-effective fabrication. The device demonstrates an ideality factor of 1.67, a rectification factor of approximately 4x10^5 at {\pm}1.0 V, and a Schottky barrier height of 0.83 eV. A strong linear relationship between light intensity and photocurrent is also observed. Furthermore, the device exhibits a peak external quantum efficiency of ~26% at 540 nm and a peak internal quantum efficiency of ~97% at 410 nm. Transient photocurrent and photovoltaic measurements show approximately one-microsecond extraction and several-millisecond recombination times, respectively, revealing effective charge collection for photovoltaic applications. These results indicate that the rf-MLG/n-Si Schottky junction is well-formed and achieves performance comparable to that of SLG devices, demonstrating its potential for optoelectronic applications.
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