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arXiv 2504.20175cs.ETeess.SP
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Sub-THz频率下反射与透射RIS的切换技术评估

Evaluation of Switching Technologies for Reflective and Transmissive RISs at Sub-THz Frequencies

Sofia I. Inácio, Yihan Ma, Qi Luo, Luca Lucci, Awanish Kumar, José Luis Gonzalez Jimenez, Bruno Reig, Alexandre Siligaris, Denis Mercier, Jonas Deuermeier, Asal… 展开作者

Sofia I. Inácio, Yihan Ma, Qi Luo, Luca Lucci, Awanish Kumar, José Luis Gonzalez Jimenez, Bruno Reig, Alexandre Siligaris, Denis Mercier, Jonas Deuermeier, Asal Kiazadeh, Verónica Lain-Rubio, Oleg Cojocari, Tung D. Phan, Ping Jack Soh, Sérgio Matos, George C. Alexandropoulos, Luís M. Pessoa, Antonio Clemente

AI总结:

本文评估了多种先进切换技术在Sub-THz频段反射与透射RIS设计中的应用潜力,以克服D波段传统技术的局限性。

摘要:

对于即将到来的6G无线网络,可重构智能表面是一项关键技术,能够在反射和透射模式下实现动态波束成形和信号操控。预计将利用毫米波和THz频段,这带来了独特的机遇,但也带来了重大挑战。选择能够以最小损耗和高效率支持高频操作的切换技术尤为复杂。在这项工作中,我们展示了在RIS设计中使用Schottky二极管、忆阻器开关、液态金属基开关、相变材料和RF-SOI技术等先进组件的潜力,作为克服D波段(110-170 GHz)传统技术固有局限性的替代方案。

英文摘要:

For the upcoming 6G wireless networks, reconfigurable intelligent surfaces are an essential technology, enabling dynamic beamforming and signal manipulation in both reflective and transmissive modes. It is expected to utilize frequency bands in the millimeter-wave and THz, which presents unique opportunities but also significant challenges. The selection of switching technologies that can support high-frequency operation with minimal loss and high efficiency is particularly complex. In this work, we demonstrate the potential of advanced components such as Schottky diodes, memristor switches, liquid metal-based switches, phase change materials, and RF-SOI technology in RIS designs as an alternative to overcome limitations inherent in traditional technologies in D-band (110-170 GHz).

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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