三星CXL内存模块混合原型的性能表征与使用指南
Performance Characterizations and Usage Guidelines of Samsung CXL Memory Module Hybrid Prototype
AI总结：
针对数据密集型工作负载，本文首次公开表征了三星CMM-H（CXL内存模块混合）FPGA原型，验证其基于NAND闪存的内存设备可运行多种应用，并提供使用指南以优化性能。
摘要：
人工智能（AI）、机器学习（ML）、高性能计算（HPC）、内存数据库和实时分析等数据密集型工作负载的日益普及，暴露了DRAM等传统内存技术的局限性。尽管DRAM具有低延迟和高吞吐量的优势，但其成本高昂、扩展性受限且易失性，使其在现代数据中心中对容量受限和持久性应用不太可行。近期，计算快速链接（CXL）作为一种有前景的替代方案出现，实现了CPU与外部设备之间的高速、缓存行粒度通信。通过利用CXL技术，NAND闪存现在可用作内存扩展，带来三大好处：字节可寻址性、可扩展容量和低成本的持久性。三星的CXL内存模块混合（CMM-H）是首个通过纯硬件解决方案实现这些优势的产品，即它不像传统块设备那样产生任何操作系统和输入/输出开销。特别是，CMM-H在单个设备中集成了DRAM缓存和NAND闪存，以提供接近DRAM的延迟。本文首次公开了基于FPGA的CMM-H原型的全面表征研究。通过这项研究，我们解决了用户关于各种应用程序能否在由NAND闪存介质支持的内存设备上成功运行的担忧。此外，基于这些表征，我们提供了如何最佳利用CMM-H设备的关键见解。
英文摘要：
The growing prevalence of data-intensive workloads, such as artificial intelligence (AI), machine learning (ML), high-performance computing (HPC), in-memory databases, and real-time analytics, has exposed limitations in conventional memory technologies like DRAM. While DRAM offers low latency and high throughput, it is constrained by high costs, scalability challenges, and volatility, making it less viable for capacity-bound and persistent applications in modern datacenters. Recently, Compute Express Link (CXL) has emerged as a promising alternative, enabling high-speed, cacheline-granular communication between CPUs and external devices. By leveraging CXL technology, NAND flash can now be used as memory expansion, offering three-fold benefits: byte-addressability, scalable capacity, and persistence at a low cost. Samsung's CXL Memory Module Hybrid (CMM-H) is the first product to deliver these benefits through a hardware-only solution, i.e., it does not incur any OS and IO overheads like conventional block devices. In particular, CMM-H integrates a DRAM cache with NAND flash in a single device to deliver near-DRAM latency. This paper presents the first publicly available study for comprehensive characterizations of an FPGA-based CMM-H prototype. Through this study, we address users' concerns about whether a wide variety of applications can successfully run on a memory device backed by NAND flash medium. Additionally, based on these characterizations, we provide key insights into how to best take advantage of the CMM-H device.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
