利用石墨烯上的图案化介电层实现六方氮化硼色心的定位
Localisation of hexagonal boron nitride colour centres using patterned dielectric layers on graphene
AI总结：
本文提出利用原子层沉积在石墨烯上生长图案化Al2O3介电柱来定位hBN色心发射，抑制电荷转移猝灭，并支持垂直电场器件架构，为可扩展量子器件应用奠定基础。
摘要：
二维六方氮化硼（hBN）中的缺陷色心是室温下自旋量子比特、单光子源和量子传感器以及二维紫外发光二极管发展中最有前景的构建模块之一。然而，实现此类器件以迈向可扩展技术的一个重要要求是对hBN色心进行确定性定位。在此，我们展示了一种新的hBN色心发射定位方法，该方法利用通过原子层沉积（ALD）在石墨烯上生长的图案化介电层。虽然hBN直接沉积在石墨烯上的区域由于电荷转移而使色心发射被猝灭，但在hBN沉积于微米级Al2O3柱上的区域，色心发射得以保持，因为这些Al2O3柱充当电荷转移的势垒。重要的是，我们的方法允许构建以石墨烯层作为顶部和底部电极来施加垂直电场的器件架构，例如用于电致发光器件中的载流子注入、色心发射的斯塔克位移以及缺陷色心的电荷态控制。此外，利用ALD直接在石墨烯上生长介电层能够以原子层精度控制隧穿势垒厚度，这对许多此类器件应用至关重要。我们的工作代表了朝着实现基于电控hBN色心确定性定位的广泛可扩展器件应用迈出的重要一步。
英文摘要：
One of the most promising building blocks for the development of spin qubits, single-photon sources, and quantum sensors at room temperature, as well as 2D ultraviolet light-emitting diodes, are defect colour centres in 2D hexagonal boron nitride (hBN). However, a significant requirement for the realisation of such devices towards scalable technologies is the deterministic localisation of hBN colour centres. Here, we demonstrate a novel approach to the localisation of hBN colour centre emission by using patterned dielectric layers grown on graphene via atomic layer deposition (ALD). While colour centre emission is quenched within areas where hBN is deposited directly on graphene due to charge transfer, it is maintained where hBN is deposited on micron-sized Al2O3 pillars which act as barriers to charge transfer. Importantly, our approach allows for device architectures where graphene layers are used as top and bottom electrodes for the application of vertical electric fields, such as for carrier injection in electroluminescent devices, Stark shifting of colour centre emission, and charge state control of defect colour centres. Furthermore, the use of ALD to grow dielectric layers directly on graphene allows for the control of tunnel barrier thicknesses with atomic layer precision, which is crucial for many of these device applications. Our work represents an important step towards the realisation of a wide range of scalable device applications based on the determinsitic localisation of electrically controlled hBN colour centres
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
