基于二维材料堆叠与选择性刻蚀的扭曲异质双层光子晶体
Twisted heterobilayer photonic crystal based on stacking and selective etching of 2D materials
AI总结：
针对多层扭曲光子晶体纳米加工的挑战，在石墨/Si$_3$N$_4$异质结构中通过干法转移与选择性刻蚀制备了扭曲异质双层光子晶体，实验观察到莫尔位点产生的可见光波段腔光子模式，为光子控制提供了新自由度。
摘要：
具有莫尔超晶格的纳米光子器件因其独特的周期性和对光子的高效控制而备受关注。至今，实验研究主要集中在单层器件上，即两层或多层光子晶体图案在单层材料中合并并刻蚀。相比之下，多层材料的扭曲光子晶体对纳米加工技术提出了挑战，因为上层材料的生长通常需要没有纳米结构的平滑底层。为此，我们在石墨/Si$_3$N$_4$异质结构中制备了扭曲异质双层光子晶体。我们采用干法转移技术将石墨堆叠在预刻有光子晶体图案的底层Si$_3$N$_4$之上。使用选择性干法刻蚀配方分别刻蚀两层光子晶体，提高了对准的质量和精度。实验中清晰地观察到了由莫尔位点产生的可见光波段$\sim 700$ nm的腔光子模式。这些结果揭示了异质双层纳米光子器件的实验图景，并为设计灵活性和在新自由度下控制光子开辟了道路。
英文摘要：
Nanophotonic devices with moiré superlattice is currently attracting broad interest due to the unique periodicity and high efficiency control of photons. Till now, experimental investigations mainly focus on the single layer device, i.e., two or more layers of photonic crystal patterns are merged and etched in a single layer of material. By comparison, twisted photonic crystal with multilayer materials raises challenges in the nanofabrication technology, because the growth of upper layer material usually requires a smooth bottom layer without nanostructures. Hereby, we fabricate twisted heterobilayer photonic crystal in the graphite/Si$_3$N$_4$ heterostructure. We use dry transfer method to stack the graphite on top of bottom Si$_3$N$_4$ with pre-etched photonic crystal patterns. Selective dry etching recipes are used to etch two photonic crystal layers individually, which improves the quality and accuracy in alignment. The cavity photonic mode at the visible wavelength $\sim 700$ nm arsing from the moiré site is clearly observed in experiment. These results reveal the experimental diagram of heterobilayer nanophotonic devices and open the way to design flexibility and control of photons in new degrees of freedom.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
