一种利用气相HF制备原子级清洁Si(100)和SiGe(100)表面的低温工艺
A reduced-temperature process for preparing atomically clean Si(100) and SiGe(100) surfaces with vapor HF
AI总结：
本文提出利用气相HF清洗在600°C（Si）和580°C（SiGe）低温下制备原子级清洁有序表面，并验证其可用于STM氢脱附光刻，为APAM与硅代工集成提供新路径。
摘要：
硅加工技术（如原子精度先进制造（APAM）和外延生长）要求表面制备能够激活氧化物脱附（通常>1000 $^{\circ}$C），并促进表面重构为原子级清洁、平坦且有序的Si(100)-2$\times$1。我们比较了Si和Si/SiGe表面的水相和气相清洗，以在较低温度下制备APAM就绪和外延就绪的表面。角分辨X射线光电子能谱（ARXPS）和傅里叶变换红外（FTIR）光谱表明，气相氟化氢（VHF）清洗显著减少了碳表面污染，并允许化学制备的表面在较低温度下重构——Si为600 $^{\circ}$C，Si/Si$_{0.7}$Ge$_{0.3}$异质结构为580 $^{\circ}$C——形成扫描隧道显微镜（STM）所显示的有序原子台阶结构。在热处理和真空氢终止之后，我们在经VHF处理的Si样品上展示了STM氢脱附光刻（HDL），利用与CMOS工艺流程相似的热预算创建了能够实现区域选择性化学的反应区。我们预计这些结果将为APAM与硅代工工艺的集成开辟新途径。
英文摘要：
Silicon processing techniques such as atomic precision advanced manufacturing (APAM) and epitaxial growth require surface preparations that activate oxide desorption (typically >1000 $^{\circ}$C) and promote surface reconstruction toward atomically-clean, flat, and ordered Si(100)-2$\times$1. We compare aqueous and vapor phase cleaning of Si and Si/SiGe surfaces to prepare APAM-ready and epitaxy-ready surfaces at lower temperatures. Angle resolved X-ray photoelectron spectroscopy (ARXPS) and Fourier transform infrared (FTIR) spectroscopy indicate that vapor hydrogen fluoride (VHF) cleans dramatically reduce carbon surface contamination and allow the chemically prepared surface to reconstruct at lower temperatures, 600 $^{\circ}$C for Si and 580 $^{\circ}$C for a Si/Si$_{0.7}$Ge$_{0.3}$ heterostructures, into an ordered atomic terrace structure indicated by scanning tunneling microscopy (STM). After thermal treatment and vacuum hydrogen termination, we demonstrate STM hydrogen desorption lithography (HDL) on VHF-treated Si samples, creating reactive zones that enable area-selective chemistry using a thermal budget similar to CMOS process flows. We anticipate these results will establish new pathways to integrate APAM with Si foundry processing.
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