波导Kerr介质中的亚泊松光
Sub-Poissonian Light in a Waveguide Kerr-medium
AI总结:
本文研究芯片波导中Kerr介质产生亚泊松光的能力,提出新解析公式,数值显示在几米长波导中100 mW功率下可实现5-15 dB光子噪声抑制。
摘要:
芯片上的波导为实现光的非线性光学变换提供了一种新介质。现代$\ ext{Si}_3\ ext{N}_4$芯片波导因其高Kerr非线性、抑制导波声学声子(GAWBS)引起的布里渊散射以及长达一米的长度而具有吸引力。分析了波导以位移Kerr态形式产生亚泊松光的能力。我们提供了新的解析公式,用于估计在任何输入光振幅值下抑制位移Kerr态光子涨落的能力。给出了数值计算结果。结果表明,在几米长的波导中,当光功率为100 mW时,光子噪声抑制程度可达5-15 dB。
英文摘要:
Waveguides on a chip represent a new medium for implementing nonlinear optical transformations of light. Modern $\text{Si}_3\text{N}_4$ chip waveguides are attractive due to their high Kerr nonlinearity, suppressed Brillouin scattering on guided acoustic waves (GAWBS), and lengths up to one meter. The capabilities of waveguides for generating sub-Poissonian light in the form of a displaced Kerr state are analyzed. We offer new analytical formulas for estimating the capabilities of suppressing photon fluctuations of a displaced Kerr state for any value of input light amplitude. The results of numerical calculations are presented. It is shown that the degree of photon noise suppression can reach values of 5 - 15 dB with 100 mW light power in waveguides a few meters long.
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