迈斯纳效应与非 reciprocal 电荷输运在非拓扑 1T-CrTe2/FeTe 异质结构中
Meissner Effect and Nonreciprocal Charge Transport in Non-Topological 1T-CrTe2/FeTe Heterostructures
AI总结：
研究通过分子束外延生长1T-CrTe2层于FeTe层上，发现其具有约12K的临界温度超导性，并观察到迈斯纳效应及非 reciprocal 电荷输运行为，为磁控超导二极管效应提供了新平台。
摘要：
界面诱导超导性最近通过在反铁磁FeTe层上堆叠磁拓扑绝缘体层实现。然而，驱动这种新兴超导性的机制仍不清楚。在此，我们利用分子束外延生长一种具有室温居里温度的二维铁磁体1T-CrTe2层于FeTe层上。这些1T-CrTe2/FeTe异质结构显示出约12K的临界温度超导性。通过磁力显微镜测量，我们观察到1T-CrTe2层表面的迈斯纳效应。我们的电输运测量揭示了1T-CrTe2/FeTe异质结构表现出非 reciprocal 电荷输运行为，其特征是大磁电旋磁各向异性系数。1T-CrTe2/FeTe异质结构中增强的非 reciprocal 电荷输运为探索磁控超导二极管效应提供了有前景的平台。
英文摘要：
Interface-induced superconductivity has recently been achieved by stacking a magnetic topological insulator layer on an antiferromagnetic FeTe layer. However, the mechanism driving this emergent superconductivity remains unclear. Here, we employ molecular beam epitaxy to grow a 1T-CrTe2 layer, a two-dimensional ferromagnet with a Curie temperature up to room temperature, on a FeTe layer. These 1T-CrTe2/FeTe heterostructures show superconductivity with a critical temperature of ~12 K. Through magnetic force microscopy measurements, we observe the Meissner effect on the surface of the 1T-CrTe2 layer. Our electrical transport measurements reveal that the 1T-CrTe2/FeTe heterostructures exhibit nonreciprocal charge transport behavior, characterized by a large magneto-chiral anisotropy coefficient. The enhanced nonreciprocal charge transport in 1T-CrTe2/FeTe heterostructures provides a promising platform for exploring the magnetically controllable superconducting diode effect.
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