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arXiv 2412.02407physics.app-phcond-mat.mtrl-sci
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基于 PMMA 和热释放胶带的干法转移用于二维 TMDC 层的异质集成

Dry Transfer Based on PMMA and Thermal Release Tape for Heterogeneous Integration of 2D-TMDC Layers

Amir Ghiami, Hleb Fiadziushkin, Tianyishan Sun, Songyao Tang, Yibing Wang, Eva Mayer, Jochen M. Schneider, Agata Piacentini, Max C. Lemme, Michael Heuken, Holge… 展开作者

Amir Ghiami, Hleb Fiadziushkin, Tianyishan Sun, Songyao Tang, Yibing Wang, Eva Mayer, Jochen M. Schneider, Agata Piacentini, Max C. Lemme, Michael Heuken, Holger Kalisch, Andrei Vescan

AI总结:

提出一种结合 PMMA 与 TRT 的可扩展干法转移工艺,用于 MOCVD 生长的 2D-TMDC,实验证明其在洁净度、结构完整性及 FET 性能上优于 KOH 湿法转移。

摘要:

将 2D-TMDC(二维过渡金属硫族化合物)从生长衬底可靠且可扩展地转移到目标衬底,并具有高重复性和良率,是器件集成的关键步骤。在本工作中,我们提出了一种可扩展的干法转移方法,用于在蓝宝石上通过 MOCVD(金属有机化学气相沉积)生长的 2D-TMDC。向硅/二氧化硅(Si/SiO$_2$)衬底的转移分别使用 PMMA(聚甲基丙烯酸甲酯)和 TRT(热释放胶带)作为牺牲层和载体。我们提出的方法确保了从生长衬底上可重复地剥离,并在溶剂中去除 PMMA 期间更好地保护 2D-TMDC,同时不损害其与目标衬底的粘附性。对本工作提出的干法与基于氢氧化钾(KOH)溶液的标准湿法转移进行的全面比较表明,干法转移层在洁净度和结构完整性方面均有改善,这分别由 X 射线光电子能谱和拉曼光谱所证实。此外,所制备的场效应晶体管(FET)在亚阈值摆幅、最大漏极电流和器件间差异性方面均表现出改善。本工作开发的干法转移方法能够将 2D-TMDC 层高重复性地大面积集成到(光)电子元件中,同时更好地保留这些层的原生生长特性。

英文摘要:

A reliable and scalable transfer of 2D-TMDCs (two-dimensional transition metal dichalcogenides) from the growth substrate to a target substrate with high reproducibility and yield is a crucial step for device integration. In this work, we have introduced a scalable dry-transfer approach for 2D-TMDCs grown by MOCVD (metal-organic chemical vapor deposition) on sapphire. Transfer to a silicon/silicon dioxide (Si/SiO$_2$) substrate is performed using PMMA (poly(methyl methacrylate)) and TRT (thermal release tape) as sacrificial layer and carrier, respectively. Our proposed method ensures a reproducible peel-off from the growth substrate and better preservation of the 2D-TMDC during PMMA removal in solvent, without compromising its adhesion to the target substrate. A comprehensive comparison between the dry method introduced in this work and a standard wet transfer based on potassium hydroxide (KOH) solution shows improvement in terms of cleanliness and structural integrity for dry-transferred layer, as evidenced by X-ray photoemission and Raman spectroscopy, respectively. Moreover, fabricated field-effect transistors (FETs) demonstrate improvements in subthreshold slope, maximum drain current and device-to-device variability. The dry-transfer method developed in this work enables large-area integration of 2D-TMDC layers into (opto)electronic components with high reproducibility, while better preserving the as-grown properties of the layers.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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