YbSb$_{2}$外延薄膜中的线性非饱和磁阻与超导电性
Linear non-saturating magnetoresistance and superconductivity in epitaxial thin films of YbSb$_{2}$
AI总结：
本文报道了在III-V族衬底上利用分子束外延生长YbSb$_{2}$外延薄膜，发现其具有宽磁场范围内的大线性非饱和磁阻及超导电性，并首次在该薄膜中观察到混合态证据，为通过薄膜工程调控稀土二锑化物电子基态提供了新途径。
摘要：
稀土二锑化物表现出有趣的基态，通常与结构序相关，这种基态可以在薄膜几何结构中进行调控。在本研究中，我们报道了利用分子束外延技术在III-V族衬底上外延合成其中一种化合物YbSb$_{2}$。所合成的薄膜在宽磁场范围内表现出大的、非饱和的线性磁阻。此外，它们还表现出超导性质，临界温度约为1.025 K，临界场约为83.85 Oe，与块体单晶中的报道一致。虽然YbSb$_{2}$在块体形式下被归类为第I类超导体，但我们的发现为外延薄膜中存在混合态提供了证据。这项工作为通过薄膜工程控制这类材料的电子基态铺平了道路。
英文摘要：
Rare-earth diantimonides display intriguing ground states often associated with structural order, which can be manipulated in thin film geometries. In this study, we report epitaxial synthesis of one such compound, YbSb$_{2}$, on III-V substrates using molecular-beam epitaxy. The synthesized thin films exhibit large, non-saturating, linear magnetoresistance across a wide magnetic field range. Additionally, they demonstrate superconducting properties, with a critical temperature of $\approx$ 1.025 K and a critical field of $\approx$ 83.85 Oe, consistent with the reports in bulk single crystals. While YbSb$_{2}$ has been classified as a Type-I superconductor in its bulk form, our findings provide evidence of a mixed state in the epitaxial thin films. This work paves the way for controlling the electronic ground state in this class of materials through thin film engineering.
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