使用咔唑基膦酸界面改性剂提高钙钛矿量子点发光二极管的亮度并降低效率衰减
Increased Brightness and Reduced Efficiency Droop in Perovskite Quantum Dot Light-Emitting Diodes using Carbazole-Based Phosphonic Acid Interface Modifiers
AI总结：
本研究在钙钛矿QLED中采用2PACz与t-Bu-2PACz膦酸改性ITO阳极，实现373,000 cd m−2亮度，并将效率衰减起始电流密度提高约1000倍。
摘要：
我们展示了将[2-(9H-咔唑-9-基)乙基]膦酸（2PACz）和[2-(3,6-二叔丁基-9H-咔唑-9-基)乙基]膦酸（t-Bu-2PACz）用作金属卤化物钙钛矿量子点发光二极管（QLED）阳极改性层的方法。与采用PEDOT:PSS（聚(3,4-乙撑二氧噻吩):聚苯乙烯磺酸盐）/PVK（聚乙烯基咔唑）空穴传输层的传统QLED结构相比，使用膦酸（PA）改性氧化铟锡（ITO）阳极制备的QLED亮度提高超过7倍，达到373,000 cd m−2，是迄今胶态钙钛矿QLED所报道的最高亮度之一。重要的是，与采用传统PEDOT:PSS/PVK空穴传输层制备的对照QLED相比，使用PA改性阳极制备的QLED的效率滚降（即效率衰减）起始点出现在约1000倍更高的电流密度下，使器件能够在亮度超过10^5 cd m−2时维持显著更高水平的外量子效率。稳态和时间分辨光致发光测量表明，这些改善源于多种因素的共同作用，包括减少PEDOT:PSS界面处的光致发光猝灭，以及降低高电流密度下的光致发光效率损失。
英文摘要：
We demonstrate the use of [2-($\textit{9H}$-carbazol-9-yl)ethyl]phosphonic acid (2PACz) and [2-(3,6-di-$\textit{tert}$-butyl-$\textit{9H}$-carbazol-9-yl)ethyl]phosphonic acid (t-Bu-2PACz) as anode modification layers in metal-halide perovskite quantum dot light-emitting diodes (QLEDs). Compared to conventional QLED structures with PEDOT:PSS (poly(3,4-ethylenedioxythiophene) polystyrene sulfonate)/PVK (poly(9-vinylcarbazole)) hole-transport layers, QLEDs made with phosphonic acid (PA)-modified indium tin oxide (ITO) anodes show an over 7-fold increase in brightness, achieving a brightness of 373,000 cd m$^{-2}$, one of the highest brightnesses reported to date for colloidal perovskite QLEDs. Importantly, the onset of efficiency roll-off, or efficiency droop, occurs at ~1000-fold higher current density for QLEDs made with PA-modified anodes compared to control QLEDs made with conventional PEDOT:PSS/PVK hole transport layers, allowing the devices to sustain significantly higher levels of external quantum efficiency at a brightness of >10$^{5}$ cd m$^{-2}$. Steady-state and time-resolved photoluminescence measurements indicate these improvements are due to a combination of multiple factors, including reducing quenching of photoluminescence at the PEDOT:PSS interface and reducing photoluminescence efficiency loss at high levels of current density.
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