作为扭曲电子源的扭曲光子表面光电效应
Surface photoelectric effect by twisted photons as a source of twisted electrons
AI总结：
本文建立扭曲光子表面光电效应理论，推导扭曲光电子概率表达式，并给出可产生纯扭曲电子的材料与温度条件。
摘要：
本文发展了由扭曲光子引起的表面光电效应理论。推导了记录扭曲光电子概率的显式表达式。找到了表面光电效应可用作纯扭曲电子源的条件。结果表明，在温度低于2.5 K时，具有无缺陷界面的轻掺杂n-InSb晶体满足这些条件。电子化学势位于Dirac锥顶附近的Dirac和Weyl半金属在温度低于60 K时满足这些条件，也可用于设计通过光电效应产生纯扭曲电子的源。
英文摘要：
The theory of surface photoelectric effect by twisted photons is developed. The explicit expression for the probability to record a twisted photoelectron is derived. The conditions when the surface photoelectric effect can be used as a pure source of twisted electrons are found. It is shown that the lightly doped n-InSb crystal with interface without defects at temperatures lower than $2.5$ K satisfies these conditions. The Dirac and Weyl semimetals with electron chemical potential near the top of the Dirac cone obey these conditions at temperatures lower than $60$ K and can also be employed for design of pure sources of twisted electrons by the photoelectric effect.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
