自由原子和半导体中孤立施主的Rydberg态的巨大逆Faraday效应
Large inverse Faraday effect for Rydberg states of free atoms and isolated donors in semiconductors
AI总结：
本文提出在Rydberg原子和半导体浅掺杂剂中通过逆Faraday效应诱导巨大磁化，理论计算表明其可产生极强的有效磁场，为Rydberg系统的磁化研究提供了新途径。
摘要：
我们报告了利用逆Faraday效应在Rydberg系统中诱导磁化，并提出该效应在两个此类系统中的出现，即Rydberg原子本身和半导体中的浅掺杂剂。Rydberg原子具有很大的轨道半径。这种大半径赋予这些激发态很大的角动量，当用圆偏振光驱动时，这转化为一个大的有效磁场${B}_{\text{eff}}$。我们计算出该效应在Rb和Cs等原子的Rydberg态中产生数量级为$O(1\\,μ\text{T})\times\left( \fracω{1\\,\text{THz}} \right)^{-1} \left( \frac{I}{10\\,\text{W cm}^{-2}} \right) n^4$的有效磁场，适用于频率为omega、强度为${I}$（以分母为单位表示）的非共振光束，其中$n$为主量子数。此外，磷掺杂硅的太赫兹光谱显示，将浅掺杂剂激发至类Rydberg态具有很大的截面，即使对于小的$n$，也有可能用圆偏振光类似地驱动以产生更大的磁化。我们的理论计算估计，在光束强度为$10^8\\,\text{W cm}^{-2}$时，Si:P的${B}_{\text{eff}}$为$O(10^2\\,\text{T})$。
英文摘要：
We report on the induction of magnetization in Rydberg systems by means of the inverse Faraday effect, and propose the appearance of the effect in two such systems, Rydberg atoms proper and shallow dopants in semiconductors. Rydberg atoms are characterized by a large orbital radius. This large radius gives such excited states a large angular moment, which when driven with circularly polarized light, translates to a large effective magnetic field ${B}_{\text{eff}}$. We calculate this effect to generate effective magnetic fields of $O(1\,μ\text{T})\times\left( \fracω{1\,\text{THz}} \right)^{-1} \left( \frac{I}{10\,\text{W cm}^{-2}} \right) n^4$ in the Rydberg states of atoms such as Rb and Cs for off-resonant photon beams with frequency omega and intensity ${I}$ expressed in units of the denominators and $n$ the principal quantum number. Additionally, terahertz spectroscopy of phosphorus doped silicon reveals a large cross-section for excitation of shallow dopants to Rydberg-like states, which even for small $n$ have the potential to be driven similarly with circularly polarized light to produce an even larger magnetization. Our theoretical calculations estimate ${B}_{\text{eff}}$ as $O(10^2\,\text{T})$ for Si:P with a beam intensity of $10^8\,\text{W cm}^{-2}$.
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