具有可靠高灵敏度的压阻式PtSe$_2$压力传感器及其在CMOS ASIC衬底上的集成
Piezoresistive PtSe$_2$ pressure sensors with reliable high sensitivity and their integration into CMOS ASIC substrates
AI总结：
本研究采用大规模合成的二维二硒化铂薄膜作为压阻膜，开发出高灵敏度压力传感器，并成功将其与CMOS技术集成，实现了比现有MEMS技术更小尺寸的器件。
摘要：
基于膜的压力传感器是微机电系统（MEMS）的重要市场。二维（2D）材料因其质量小，成为悬浮膜的极佳候选材料，可提供高灵敏度和小尺寸传感器。本研究展示了采用大规模合成的二维二硒化铂（PtSe$_2$）薄膜作为压阻膜的压力传感器，该薄膜仅由薄聚合物层支撑。我们研究了三种具有不同生长参数的合成方法，并建立了一种可靠的、高良率的悬浮PtSe$_2$/PMMA膜制造工艺，跨越密封腔体制备。这些压力传感器可重复地展现出高于6 x 10$^4$ kPa$^{-1}$的灵敏度。我们表明，灵敏度明显取决于膜直径和PtSe$_2$薄膜的压阻应变系数。通过减少器件内膜的数量来缩小总器件尺寸，可显著提高面积归一化灵敏度。这使得制造具有高灵敏度但器件尺寸远小于现有最先进MEMS技术的压力传感器成为可能。我们进一步将PtSe$_2$压力传感器与CMOS技术集成，提高了基于PtSe$_2$的MEMS和NEMS器件的技术成熟度。
英文摘要：
Membrane-based sensors are an important market for microelectromechanical systems (MEMS). Two-dimensional (2D) materials, with their low mass, are excellent candidates for suspended membranes to provide high sensitivity, small footprint sensors. The present work demonstrates pressure sensors employing large-scale-synthesized 2D platinum diselenide (PtSe${_2}$) films as piezoresistive membranes supported only by a thin polymer layer. We investigate three different synthesis methods with contrasting growth parameters and establish a reliable high yield fabrication process for suspended PtSe${_2}$/PMMA membranes across sealed cavities. The pressure sensors reproducibly display sensitivities above 6 x 10${^4}$ kPa${^{-1}}$. We show that the sensitivity clearly depends on the membrane diameter and the piezoresistive gauge factor of the PtSe${_2}$ film. Reducing the total device size by decreasing the number of membranes within a device leads to a significant increase in the area-normalized sensitivity. This allows the manufacturing of pressure sensors with high sensitivity but a much smaller device footprint than the current state-of-the-art MEMS technology. We further integrate PtSe${_2}$ pressure sensors with CMOS technology, improving the technological readiness of PtSe${_2}$-based MEMS and NEMS devices.
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