采用碳化物中间层实现金刚石-AlGaN界面的低热阻
Low Thermal Resistance of Diamond-AlGaN Interfaces Achieved Using Carbide Interlayers
AI总结：
本研究针对金刚石/AlGaN界面高热阻问题，采用溅射碳化物中间层实现创纪录低热阻，结合时域与稳态热反射的混合技术提升测量精度，为半导体器件热性能优化提供了新路径。
摘要：
本研究针对纳米晶金刚石/AlGaN界面的热输运展开探究，该研究对提升AlGaN/AlGaN基器件的热管理能力至关重要。直接在AlGaN上通过化学气相沉积生长金刚石会形成无序界面，其热边界电阻（TBR）高达20.6 m²·K/GW。我们采用溅射沉积的碳化物中间层（例如B₄C、SiC、B₄C/SiC）来降低金刚石/AlGaN界面的热边界电阻。对于Al₀.₆₅Ga₀.₃₅N样品，采用B₄C和SiC中间层后，热边界电阻分别降至3.4和3.7 m²·K/GW的创纪录低值。界面的扫描透射电子显微镜（STEM）成像显示，中间层厚度在1.7-2.5 nm之间，呈非晶结构。此外，对STEM图像局部区域的快速傅里叶变换（FFT）表征显示，AlGaN层中存在清晰的晶体条纹，证实该层在金刚石生长过程中得到了妥善保护，未受氢等离子体损伤。为准确测量热边界电阻，我们开发了一种混合技术，将时域热反射法与稳态热反射拟合相结合，对埋层热阻具有更高的灵敏度。本研究结果凸显了中间层工程在增强热输运方面的效用，也证明了创新测量技术对准确表征复杂热界面的重要性。该研究为未来通过界面工程和先进测量方法改善半导体器件热性能的研究奠定了基础。
英文摘要：
This study investigates thermal transport across nanocrystalline diamond/AlGaN interfaces, crucial for enhancing thermal management in AlGaN/AlGaN-based devices. Chemical vapor deposition growth of diamond directly on AlGaN resulted in a disordered interface with a high thermal boundary resistance (TBR) of 20.6 m^2-K/GW. We employed sputtered carbide interlayers (e.g., $B_4C$, $SiC$, $B_4C/SiC$) to reduce thermal boundary resistance in diamond/AlGaN interfaces. The carbide interlayers resulted in record-low thermal boundary resistance values of 3.4 and 3.7 m^2-K/GW for Al$_{0.65}$Ga$_{0.35}$N samples with $B_4C$ and $SiC$ interlayers, respectively. STEM imaging of the interface reveals interlayer thicknesses between 1.7-2.5 nm, with an amorphous structure. Additionally, Fast-Fourier Transform (FFT) characterization of sections of the STEM images displayed sharp crystalline fringes in the AlGaN layer, confirming it was properly protected from damage from hydrogen plasma during the diamond growth. In order to accurately measure the thermal boundary resistance we develop a hybrid technique, combining time-domain thermoreflectance and steady-state thermoreflectance fitting, offering superior sensitivity to buried thermal resistances. Our findings underscore the efficacy of interlayer engineering in enhancing thermal transport and demonstrate the importance of innovative measurement techniques in accurately characterizing complex thermal interfaces. This study provides a foundation for future research in improving thermal properties of semiconductor devices through interface engineering and advanced measurement methodologies.
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