三维石墨烯基泡沫结构的拉伸诱导电输运性能可调性
Stretch-induced tunability of electrical transport properties of three-dimensional graphene-based foam structures
AI总结：
本文研究了预拉伸对三维石墨烯基泡沫电输运性能的调控作用，提出包含三种导电机制的导电网络模型，揭示了电阻率温度依赖性转变的机理，为优化可拉伸电子器件提供指导。
摘要：
三维石墨烯基泡沫（GFs）的快速电子传输和优异的多向柔性在可拉伸电子领域至关重要。我们观察到预拉伸会诱导GFs的温度依赖性电阻率发生调制，随着预拉伸应变水平的增加，GF样品电阻率独特的温度依赖性会发生变化，甚至可能表现出从负依赖到正依赖的显著转变。我们尝试通过提出一种新的导电网络模型来解释这一现象，该模型将GF结构表示为相互连接的石墨烯岛和岛/岛导电结，并包含三种导电机制：热激活导电、声子限制导电和涨落诱导隧穿导电。通过拟合辅助分析，我们发现GF样品电阻率的温度依赖性主要依赖于石墨烯岛和岛/岛导电结的离散数量，以及每种导电机制产生的电阻率。随着预拉伸应变水平的增加，这些因素会因导电网络改变、局部应变诱导的声子硬化和局部应变诱导的输运能隙调制而发生变化，所有这些都源于预拉伸。我们的结果为优化基于GFs的可拉伸电子器件提供了有价值的见解，例如通过结构改性实现性能增强。
英文摘要：
The fast electron transport and superior multidirectional flexibility of three-dimensional graphene-based foams (GFs) are pivotal in the realm of stretchable electronics. We observed pre-stretching induced modulation of the temperature-dependent electrical resistivity of GFs, where, as the pre-stretch strain level increased, the distinct temperature dependence of the resistivity of a GF sample would change and might even exhibit a notable transition from negative dependence to positive dependence. We attempted to interpret the phenomenon by proposing a new conduction network model that represents GF structures as interconnected graphene islands and island/island conduction junctions and incorporates three conduction mechanisms: thermally activated conduction, phonon-limited conduction, and fluctuation-induced tunneling conduction. By fitting-assisted analysis, we found that the temperature dependence of the resistivity of a GF sample primarily relies on the discrete quantities of graphene islands and island/island conduction junctions, and the resistivity originating from each conduction mechanism. As pre-stretch strain level increases, these factors would change due to conduction network alteration, local strain-induced phonon hardening, and local strain-induced transport gap modulation, all resulting from pre-stretching. Our results offer valuable insights into the optimization of GFs-based stretchable electronic devices, such as performance enhancement through structural modifications.
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