单层二维材料非共振强场电离的二维 Keldysh 理论
Two-dimensional Keldysh theory for non-resonant strong-field ionization of monolayer 2D materials
AI总结：
本文将固体 Keldysh 光电离理论推广到二维半导体，推导了 Kane 色散双带模型的闭式与渐近公式，并经单层 MoS2 实验验证，可用于强光-二维材料相互作用研究。
摘要：
固体光电离的 Keldysh 理论被推广至原子级薄的二维半导体。我们针对具有 Kane 色散的双带模型推导了闭式公式及其渐近形式。这些公式表现出与体相对应物显著不同的行为，其原因在于二维态密度的标度特性。我们将公式与近期单层 MoS2 强场电离实验进行比较以作验证，结果吻合良好。本工作有望在强光与二维材料相互作用领域获得广泛应用。
英文摘要：
The Keldysh theory of photoionization for solids is generalized to atomically thin two-dimensional semiconductors. We derive a closed-form formula and its asymptotic forms for a two-band model with a Kane dispersion. These formulas exhibit characteristically different behaviors from their bulk counterparts which are attributed to the scaling of the 2D density of states. We validate our formulas by comparing them to recent strong-field ionization experiments in monolayer MoS2 with good agreement. Our work is expected to find a wide range of applications in intense light - 2D material interaction.
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